@inproceedings{b8e0521bbb0b45dc94bf804479431f5c,
title = "Investigation of Crystal-Face-Resolved Gate Switching Instability in 4H-SiC UMOSFETs Enabled by a Source-Separated Single-Cell Structure",
abstract = "In this work, we demonstrate the crystal-face-resolved gate switching instability in 4H-SiC UMOSFET. By employing a source-separated single-cell (SSSC) structure, we are able to characterize GSI of each crystal face and revealing reliability discrepancies arising from variations in crystal orientation, interface quality, and process-induced sidewall asymmetry.",
keywords = "Gate Switching Instability, Silicon Carbide, UMOSFET",
author = "Liao, \{Wei Jhe\} and Hong, \{Chia Lung\} and Hsiao, \{Yi Kai\} and Tsui, \{Bing Yue\}",
note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 38th IEEE International Conference on Microelectronic Test Structures, ICMTS 2026 ; Conference date: 23-03-2026 Through 26-03-2026",
year = "2026",
doi = "10.1109/ICMTS69943.2026.11471725",
language = "English",
series = "IEEE International Conference on Microelectronic Test Structures",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2026 38th IEEE International Conference on Microelectronic Test Structures, ICMTS 2026 - Conference Proceedings",
address = "美國",
}