Investigation of channel backscattering characteristics for nanoscale SOI MOSFETs using a new temperature-dependent method

Wei Lee; Pin Su

doi:10.1109/SOI.2008.4656300

Investigation of channel backscattering characteristics for nanoscale SOI MOSFETs using a new temperature-dependent method

Wei Lee^*, Pin Su

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2008 IEEE International SOI Conference Proceedings
Pages	73-74
Number of pages	2
DOIs	https://doi.org/10.1109/SOI.2008.4656300
State	Published - 2008
Event	2008 IEEE International SOI Conference - New Paltz, NY, United States Duration: 6 Oct 2008 → 9 Oct 2008

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	2008 IEEE International SOI Conference
Country/Territory	United States
City	New Paltz, NY
Period	6/10/08 → 9/10/08

Access to Document

10.1109/SOI.2008.4656300

Cite this

@inproceedings{0d960521205646d5ae6e1f1a4083315f,

title = "Investigation of channel backscattering characteristics for nanoscale SOI MOSFETs using a new temperature-dependent method",

author = "Wei Lee and Pin Su",

year = "2008",

doi = "10.1109/SOI.2008.4656300",

language = "English",

isbn = "9781424419548",

series = "Proceedings - IEEE International SOI Conference",

pages = "73--74",

booktitle = "2008 IEEE International SOI Conference Proceedings",

note = "2008 IEEE International SOI Conference ; Conference date: 06-10-2008 Through 09-10-2008",

}

Lee, W & Su, P 2008, Investigation of channel backscattering characteristics for nanoscale SOI MOSFETs using a new temperature-dependent method. in 2008 IEEE International SOI Conference Proceedings., 4656300, Proceedings - IEEE International SOI Conference, pp. 73-74, 2008 IEEE International SOI Conference, New Paltz, NY, United States, 6/10/08. https://doi.org/10.1109/SOI.2008.4656300

Investigation of channel backscattering characteristics for nanoscale SOI MOSFETs using a new temperature-dependent method. / Lee, Wei; Su, Pin.
2008 IEEE International SOI Conference Proceedings. 2008. p. 73-74 4656300 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of channel backscattering characteristics for nanoscale SOI MOSFETs using a new temperature-dependent method

AU - Lee, Wei

AU - Su, Pin

PY - 2008

Y1 - 2008

UR - http://www.scopus.com/inward/record.url?scp=57749207719&partnerID=8YFLogxK

U2 - 10.1109/SOI.2008.4656300

DO - 10.1109/SOI.2008.4656300

M3 - Conference contribution

AN - SCOPUS:57749207719

SN - 9781424419548

T3 - Proceedings - IEEE International SOI Conference

SP - 73

EP - 74

BT - 2008 IEEE International SOI Conference Proceedings

T2 - 2008 IEEE International SOI Conference

Y2 - 6 October 2008 through 9 October 2008

ER -

Investigation of channel backscattering characteristics for nanoscale SOI MOSFETs using a new temperature-dependent method

Publication series

Conference

Access to Document

Other files and links

Cite this