Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature

Kuo Hsi Yen*, S. Nishizaki, K. Ohdaira, H. Matsumura, Y. T. Huang, Hsiao-Wen Zan, C. C. Tsai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


In this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (Tcat) regime. We studied the influence of high Tcat on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T cat, the distance between catalyzer and substrate (Dcs), and the deposition pressure (P).

Original languageEnglish
Pages (from-to)583-587
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number3-4
StatePublished - 27 May 2010
Event23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Netherlands
Duration: 23 Aug 200928 Aug 2009


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