Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature

Kuo Hsi Yen; S. Nishizaki; K. Ohdaira; H. Matsumura; Y. T. Huang; Hsiao-Wen Zan; C. C. Tsai

doi:10.1002/pssc.200982901

Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature

Kuo Hsi Yen^*, S. Nishizaki, K. Ohdaira, H. Matsumura, Y. T. Huang, Hsiao-Wen Zan, C. C. Tsai

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (T_cat) regime. We studied the influence of high T_cat on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T _cat, the distance between catalyzer and substrate (D_cs), and the deposition pressure (P).

Original language	English
Pages (from-to)	583-587
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.200982901
State	Published - 27 May 2010
Event	23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Netherlands Duration: 23 Aug 2009 → 28 Aug 2009

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title = "Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature",

abstract = "In this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (Tcat) regime. We studied the influence of high Tcat on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T cat, the distance between catalyzer and substrate (Dcs), and the deposition pressure (P).",

author = "Yen, {Kuo Hsi} and S. Nishizaki and K. Ohdaira and H. Matsumura and Huang, {Y. T.} and Hsiao-Wen Zan and Tsai, {C. C.}",

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journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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note = "23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 ; Conference date: 23-08-2009 Through 28-08-2009",

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TY - JOUR

T1 - Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature

AU - Yen, Kuo Hsi

AU - Nishizaki, S.

AU - Ohdaira, K.

AU - Matsumura, H.

AU - Huang, Y. T.

AU - Zan, Hsiao-Wen

AU - Tsai, C. C.

PY - 2010/5/27

Y1 - 2010/5/27

N2 - In this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (Tcat) regime. We studied the influence of high Tcat on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T cat, the distance between catalyzer and substrate (Dcs), and the deposition pressure (P).

AB - In this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (Tcat) regime. We studied the influence of high Tcat on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T cat, the distance between catalyzer and substrate (Dcs), and the deposition pressure (P).

UR - http://www.scopus.com/inward/record.url?scp=77952571403&partnerID=8YFLogxK

U2 - 10.1002/pssc.200982901

DO - 10.1002/pssc.200982901

M3 - Conference article

AN - SCOPUS:77952571403

SN - 1862-6351

VL - 7

SP - 583

EP - 587

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3-4

T2 - 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23

Y2 - 23 August 2009 through 28 August 2009

ER -

Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature

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