Investigation of BTI reliability for monolithic 3D 6T SRAM with ultra-thin-body GeOI MOSFETs

Keyphrases

• 6T-SRAM 100%
• Ultra-thin Body 100%
• Monolithic 3-D (M3-D) 100%
• GeOI MOSFET 100%
• IGBT Reliability 100%
• Germanium-on-insulator (GeOI) 83%
• Pullout 33%
• Interlayer Coupling 33%
• Transistor 16%
• Bitcell 16%
• Read Operation 16%
• Write Operation 16%
• Reading Time 16%
• Positive Bias Temperature Instability 16%
• Back-gate Bias 16%
• High Threshold Voltage 16%
• 6T SRAM Cell 16%
• NFET 16%
• Negative Bias Temperature Instability 16%
• BTI Stress 16%
• Stress Scenarios 16%
• Read Stability 16%
• Vth Degradation 16%
• Temporal Degradation 16%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Interlayer 100%
• Gate Bias 50%
• Access Time 50%

Earth and Planetary Sciences

• Interlayer 100%
• Threshold Voltage 50%