@inproceedings{11a7b85f7fc14371ac8025de44c14f94,
title = "Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications",
abstract = "Breakdown characteristic of GaN-HEMT with field plate (FP) technique is investigated. Source field plate length (LFP) is varied and its impact on breakdown voltage is studied. The investigation of GaN-HEMT is carried out using Technology Computer Aided Design (TCAD). Various physical models such as mobility, polarization and recombination models are used to tune the simulation. It is observed that breakdown voltage enhances source field plate length. It is also observed that VBR shows less dependency for LFP > 4μm.",
keywords = "Breakdown Voltage, Field Plate, GaN, HEMT",
author = "D. Godfrey and D. Nirmal and L. Arivazhagan and Chen, {Yu Lin} and Yu, {Tien Han} and Brigis Roy and Yeh, {Wen Kuan} and D. Godwinraj",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 5th International Conference on Devices, Circuits and Systems, ICDCS 2020 ; Conference date: 05-03-2020 Through 06-03-2020",
year = "2020",
month = mar,
doi = "10.1109/ICDCS48716.2020.243589",
language = "English",
series = "ICDCS 2020 - 2020 5th International Conference on Devices, Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "244--246",
booktitle = "ICDCS 2020 - 2020 5th International Conference on Devices, Circuits and Systems",
address = "美國",
}