Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement

Szu Han Ho; Ting Chang Chang; Ying Hsin Lu; Ching En Chen; Jyun Yu Tsai; Kuan Ju Liu; Tseung-Yuen Tseng; Osbert Cheng; Cheng Tung Huang; Ching Sen Lu

doi:10.1063/1.4868532

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO₂ structure using fast I-V measurement

Szu Han Ho, Ting Chang Chang, Ying Hsin Lu, Ching En Chen, Jyun Yu Tsai, Kuan Ju Liu, Tseung-Yuen Tseng, Osbert Cheng, Cheng Tung Huang, Ching Sen Lu

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO₂ n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V_t) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V_t shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting Hf_xZr_1-xO ₂ as gate oxide, can reduce the charge/discharge effect.

Original language	English
Article number	113503
Journal	Applied Physics Letters
Volume	104
Issue number	11
DOIs	https://doi.org/10.1063/1.4868532
State	Published - 17 Mar 2014

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Ho, S. H., Chang, T. C., Lu, Y. H., Chen, C. E., Tsai, J. Y., Liu, K. J., Tseng, T.-Y., Cheng, O., Huang, C. T., & Lu, C. S. (2014). Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO₂ structure using fast I-V measurement. Applied Physics Letters, 104(11), Article 113503. https://doi.org/10.1063/1.4868532

@article{0a872fcebb5f41fe819e8d71d908876e,

title = "Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement",

abstract = "This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO2 n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (Vt) shifts positively during fast I-V double sweep measurement. However, in I/O devices, Vt shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting HfxZr1-xO 2 as gate oxide, can reduce the charge/discharge effect.",

author = "Ho, {Szu Han} and Chang, {Ting Chang} and Lu, {Ying Hsin} and Chen, {Ching En} and Tsai, {Jyun Yu} and Liu, {Kuan Ju} and Tseung-Yuen Tseng and Osbert Cheng and Huang, {Cheng Tung} and Lu, {Ching Sen}",

year = "2014",

month = mar,

day = "17",

doi = "10.1063/1.4868532",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

Ho, SH, Chang, TC, Lu, YH, Chen, CE, Tsai, JY, Liu, KJ, Tseng, T-Y, Cheng, O, Huang, CT & Lu, CS 2014, 'Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO₂ structure using fast I-V measurement', Applied Physics Letters, vol. 104, no. 11, 113503. https://doi.org/10.1063/1.4868532

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO₂ structure using fast I-V measurement. / Ho, Szu Han; Chang, Ting Chang; Lu, Ying Hsin et al.
In: Applied Physics Letters, Vol. 104, No. 11, 113503, 17.03.2014.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement

AU - Ho, Szu Han

AU - Chang, Ting Chang

AU - Lu, Ying Hsin

AU - Chen, Ching En

AU - Tsai, Jyun Yu

AU - Liu, Kuan Ju

AU - Tseng, Tseung-Yuen

AU - Cheng, Osbert

AU - Huang, Cheng Tung

AU - Lu, Ching Sen

PY - 2014/3/17

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N2 - This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO2 n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (Vt) shifts positively during fast I-V double sweep measurement. However, in I/O devices, Vt shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting HfxZr1-xO 2 as gate oxide, can reduce the charge/discharge effect.

AB - This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO2 n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (Vt) shifts positively during fast I-V double sweep measurement. However, in I/O devices, Vt shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting HfxZr1-xO 2 as gate oxide, can reduce the charge/discharge effect.

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