Investigation and simulation of work-function variation for III-V broken-gap heterojunction tunnel FET

Keyphrases

• III-V 100%
• Work Function Variation 100%
• Broken-gap Heterojunction 100%
• Heterojunction Tunnel FET (HTFET) 100%
• Homojunction TFETs 40%
• On-state Current 20%
• FinFET Devices 20%
• Metal Gate Work Function 20%
• Metal Gate 20%
• Off-state 20%
• Broken Gap 20%
• Steep Subthreshold Slope 20%
• Device Design 20%
• Current Variation 20%
• Atomistic Simulation 20%
• Technology Computer-aided Design 20%
• High Susceptibility 20%
• Underlap 20%
• III-V FinFET 20%
• Source-side 20%
• Voronoi Method 20%
• III-V Heterojunctions 20%
• Slope Susceptibility 20%

Material Science

• Field Effect Transistor 100%
• Heterojunction 100%