Investigation and simulation of work-function variation for III-V broken-gap heterojunction tunnel FET

Chih Wei Hsu; Ming Long Fan; Vita Pi Ho Hu; Pin Su

doi:10.1109/JEDS.2015.2408356

Investigation and simulation of work-function variation for III-V broken-gap heterojunction tunnel FET

Chih Wei Hsu, Ming Long Fan, Vita Pi Ho Hu, Pin Su^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

This paper investigates and compares the impacts of metal-gate work-function variation (WFV) on III-V heterojunction tunnel FET (HTFET), homojunction TFET, and FinFET devices using a novel Voronoi method to capture the realistic metal-gate grain patterns for Technology Computer Aided Design atomistic simulations. Due to the broken-gap nature, HTFET shows significantly steeper subthreshold slope and higher susceptibility to WFV near OFF state. For ON current variation, both the HTFET and homojunction TFET show better immunity to WFV than the III-V FinFET. Device design using source-side underlap to mitigate the impact of WFV on HTFET is also assessed.

Original language	English
Article number	7053925
Pages (from-to)	194-199
Number of pages	6
Journal	IEEE Journal of the Electron Devices Society
Volume	3
Issue number	3
DOIs	https://doi.org/10.1109/JEDS.2015.2408356
State	Published - 1 May 2015

Keywords

Heterojunction Tunnel FET (HTFET)
work-function variation (WFV)

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10.1109/JEDS.2015.2408356

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title = "Investigation and simulation of work-function variation for III-V broken-gap heterojunction tunnel FET",

abstract = "This paper investigates and compares the impacts of metal-gate work-function variation (WFV) on III-V heterojunction tunnel FET (HTFET), homojunction TFET, and FinFET devices using a novel Voronoi method to capture the realistic metal-gate grain patterns for Technology Computer Aided Design atomistic simulations. Due to the broken-gap nature, HTFET shows significantly steeper subthreshold slope and higher susceptibility to WFV near OFF state. For ON current variation, both the HTFET and homojunction TFET show better immunity to WFV than the III-V FinFET. Device design using source-side underlap to mitigate the impact of WFV on HTFET is also assessed.",

keywords = "Heterojunction Tunnel FET (HTFET), work-function variation (WFV)",

author = "Hsu, {Chih Wei} and Fan, {Ming Long} and Hu, {Vita Pi Ho} and Pin Su",

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AU - Hsu, Chih Wei

AU - Fan, Ming Long

AU - Hu, Vita Pi Ho

AU - Su, Pin

PY - 2015/5/1

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N2 - This paper investigates and compares the impacts of metal-gate work-function variation (WFV) on III-V heterojunction tunnel FET (HTFET), homojunction TFET, and FinFET devices using a novel Voronoi method to capture the realistic metal-gate grain patterns for Technology Computer Aided Design atomistic simulations. Due to the broken-gap nature, HTFET shows significantly steeper subthreshold slope and higher susceptibility to WFV near OFF state. For ON current variation, both the HTFET and homojunction TFET show better immunity to WFV than the III-V FinFET. Device design using source-side underlap to mitigate the impact of WFV on HTFET is also assessed.

AB - This paper investigates and compares the impacts of metal-gate work-function variation (WFV) on III-V heterojunction tunnel FET (HTFET), homojunction TFET, and FinFET devices using a novel Voronoi method to capture the realistic metal-gate grain patterns for Technology Computer Aided Design atomistic simulations. Due to the broken-gap nature, HTFET shows significantly steeper subthreshold slope and higher susceptibility to WFV near OFF state. For ON current variation, both the HTFET and homojunction TFET show better immunity to WFV than the III-V FinFET. Device design using source-side underlap to mitigate the impact of WFV on HTFET is also assessed.

KW - Heterojunction Tunnel FET (HTFET)

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Investigation and simulation of work-function variation for III-V broken-gap heterojunction tunnel FET

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