Investigation and comparison of analog figures-of-merit for TFET and FinFET considering work-function variation

Ko Chun Lee; Ming Long Fan; Pin Su

doi:10.1016/j.microrel.2014.11.012

Investigation and comparison of analog figures-of-merit for TFET and FinFET considering work-function variation

Ko Chun Lee, Ming Long Fan, Pin Su^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This paper investigates and compares the impacts of metal-gate work-function variation on important analog figures-of-merit (FOMs) for TFET and FinFET devices using 3-D atomistic TCAD simulations. Our study indicates that, at 0.6 V supply voltage and 0.2 V gate-voltage overdrive, TFET exhibits superior variation immunity regarding transconductance to drain-current ratio (g_m/I_DS), output resistance (R_out) and intrinsic gain, and comparable variability in g_m and cutoff frequency (f_T) as compared with the FinFET counterparts. In addition, how the correlations between pertinent parameters (e.g.; g_m and R_out) impact the variation immunity of important analog FOMs are analyzed. Our study may provide insights for low-voltage analog design using TFET/FinFET technologies.

Original language	English
Pages (from-to)	332-336
Number of pages	5
Journal	Microelectronics Reliability
Volume	55
Issue number	2
DOIs	https://doi.org/10.1016/j.microrel.2014.11.012
State	Published - 1 Feb 2015

Keywords

Analog
Cutoff frequency
FOM
Intrinsic gain
Output resistance
TFET
Work-function variation

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10.1016/j.microrel.2014.11.012

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title = "Investigation and comparison of analog figures-of-merit for TFET and FinFET considering work-function variation",

abstract = "This paper investigates and compares the impacts of metal-gate work-function variation on important analog figures-of-merit (FOMs) for TFET and FinFET devices using 3-D atomistic TCAD simulations. Our study indicates that, at 0.6 V supply voltage and 0.2 V gate-voltage overdrive, TFET exhibits superior variation immunity regarding transconductance to drain-current ratio (gm/IDS), output resistance (Rout) and intrinsic gain, and comparable variability in gm and cutoff frequency (fT) as compared with the FinFET counterparts. In addition, how the correlations between pertinent parameters (e.g.; gm and Rout) impact the variation immunity of important analog FOMs are analyzed. Our study may provide insights for low-voltage analog design using TFET/FinFET technologies.",

keywords = "Analog, Cutoff frequency, FOM, Intrinsic gain, Output resistance, TFET, Work-function variation",

author = "Lee, {Ko Chun} and Fan, {Ming Long} and Pin Su",

note = "Publisher Copyright: {\textcopyright} 2014 Elsevier Ltd.",

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AU - Lee, Ko Chun

AU - Fan, Ming Long

AU - Su, Pin

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N2 - This paper investigates and compares the impacts of metal-gate work-function variation on important analog figures-of-merit (FOMs) for TFET and FinFET devices using 3-D atomistic TCAD simulations. Our study indicates that, at 0.6 V supply voltage and 0.2 V gate-voltage overdrive, TFET exhibits superior variation immunity regarding transconductance to drain-current ratio (gm/IDS), output resistance (Rout) and intrinsic gain, and comparable variability in gm and cutoff frequency (fT) as compared with the FinFET counterparts. In addition, how the correlations between pertinent parameters (e.g.; gm and Rout) impact the variation immunity of important analog FOMs are analyzed. Our study may provide insights for low-voltage analog design using TFET/FinFET technologies.

AB - This paper investigates and compares the impacts of metal-gate work-function variation on important analog figures-of-merit (FOMs) for TFET and FinFET devices using 3-D atomistic TCAD simulations. Our study indicates that, at 0.6 V supply voltage and 0.2 V gate-voltage overdrive, TFET exhibits superior variation immunity regarding transconductance to drain-current ratio (gm/IDS), output resistance (Rout) and intrinsic gain, and comparable variability in gm and cutoff frequency (fT) as compared with the FinFET counterparts. In addition, how the correlations between pertinent parameters (e.g.; gm and Rout) impact the variation immunity of important analog FOMs are analyzed. Our study may provide insights for low-voltage analog design using TFET/FinFET technologies.

KW - Analog

KW - Cutoff frequency

KW - FOM

KW - Intrinsic gain

KW - Output resistance

KW - TFET

KW - Work-function variation

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DO - 10.1016/j.microrel.2014.11.012

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SN - 0026-2714

VL - 55

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

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ER -

Investigation and comparison of analog figures-of-merit for TFET and FinFET considering work-function variation

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