Inversion-Mode In0.53Ga0.47As MOSFET with f T= 275 GHz and high V eff

Jing Yuan Wu; Ping Huang; Quang Ho Luc; Hua Lun Ko; Yung Chun Chiang; Hsiang Chan Yu; Nhan Ai Tran; Mu Yu Chen; Edward Yi Chang

doi:10.35848/1882-0786/acccd4

Inversion-Mode In_0.53Ga_0.47As MOSFET with f _T= 275 GHz and high V _eff

Jing Yuan Wu^*, Ping Huang, Quang Ho Luc, Hua Lun Ko, Yung Chun Chiang, Hsiang Chan Yu, Nhan Ai Tran, Mu Yu Chen, Edward Yi Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To the best of our knowledge, this is the highest f T value among all the reported inversion-mode InGaAs MOSFETs. Meanwhile, peak transconductance (g m) shows 1035 (μS/μm). These extraordinary properties are attributed to the N2 remote plasma treatment which results in excellent high-k/III-V interface quality. With the assistance of delay-time analysis, effective electron velocity (V eff) of 2.88 × 107(cm s-1) is extracted for a possible explanation of the observed record f T performance.

Original language	English
Article number	041007
Journal	Applied Physics Express
Volume	16
Issue number	4
DOIs	https://doi.org/10.35848/1882-0786/acccd4
State	Published - 1 Apr 2023

Keywords

InGaAs
inversion
MOSFET
transition frequency

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10.35848/1882-0786/acccd4

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title = "Inversion-Mode In0.53Ga0.47As MOSFET with f T= 275 GHz and high V eff",

abstract = "In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To the best of our knowledge, this is the highest f T value among all the reported inversion-mode InGaAs MOSFETs. Meanwhile, peak transconductance (g m) shows 1035 (μS/μm). These extraordinary properties are attributed to the N2 remote plasma treatment which results in excellent high-k/III-V interface quality. With the assistance of delay-time analysis, effective electron velocity (V eff) of 2.88 × 107(cm s-1) is extracted for a possible explanation of the observed record f T performance.",

keywords = "InGaAs, inversion, MOSFET, transition frequency",

author = "Wu, {Jing Yuan} and Ping Huang and Luc, {Quang Ho} and Ko, {Hua Lun} and Chiang, {Yung Chun} and Yu, {Hsiang Chan} and Tran, {Nhan Ai} and Chen, {Mu Yu} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2023 The Japan Society of Applied Physics.",

year = "2023",

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doi = "10.35848/1882-0786/acccd4",

language = "English",

volume = "16",

journal = "Applied Physics Express",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Inversion-Mode In0.53Ga0.47As MOSFET with f T= 275 GHz and high V eff

AU - Wu, Jing Yuan

AU - Huang, Ping

AU - Luc, Quang Ho

AU - Ko, Hua Lun

AU - Chiang, Yung Chun

AU - Yu, Hsiang Chan

AU - Tran, Nhan Ai

AU - Chen, Mu Yu

AU - Chang, Edward Yi

PY - 2023/4/1

Y1 - 2023/4/1

N2 - In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To the best of our knowledge, this is the highest f T value among all the reported inversion-mode InGaAs MOSFETs. Meanwhile, peak transconductance (g m) shows 1035 (μS/μm). These extraordinary properties are attributed to the N2 remote plasma treatment which results in excellent high-k/III-V interface quality. With the assistance of delay-time analysis, effective electron velocity (V eff) of 2.88 × 107(cm s-1) is extracted for a possible explanation of the observed record f T performance.

AB - In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To the best of our knowledge, this is the highest f T value among all the reported inversion-mode InGaAs MOSFETs. Meanwhile, peak transconductance (g m) shows 1035 (μS/μm). These extraordinary properties are attributed to the N2 remote plasma treatment which results in excellent high-k/III-V interface quality. With the assistance of delay-time analysis, effective electron velocity (V eff) of 2.88 × 107(cm s-1) is extracted for a possible explanation of the observed record f T performance.

KW - InGaAs

KW - inversion

KW - MOSFET

KW - transition frequency

UR - http://www.scopus.com/inward/record.url?scp=85159150999&partnerID=8YFLogxK

U2 - 10.35848/1882-0786/acccd4

DO - 10.35848/1882-0786/acccd4

M3 - Article

AN - SCOPUS:85159150999

SN - 1882-0778

VL - 16

JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

M1 - 041007

ER -

Inversion-Mode In_0.53Ga_0.47As MOSFET with f _T= 275 GHz and high V _eff

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