Inversion-mode InGaAs FinFETs for RF applications

Jing Yuan Wu; Ping Huang; Quang Ho Luc; Yung Chun Chiang; Hsiang Chan Yu; Mu Yu Chen; Edward Yi Chang

doi:10.35848/1882-0786/acf1f0

Inversion-mode InGaAs FinFETs for RF applications

Jing Yuan Wu^*, Ping Huang, Quang Ho Luc, Yung Chun Chiang, Hsiang Chan Yu, Mu Yu Chen, Edward Yi Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, we present an inversion-mode InGaAs FinFETs with transition frequency (f _T) = 263 GHz and maximum oscillation frequency (f _max) = 70 GHz. In addition, peak transconductance (g _m) = 1976 (μS μm⁻¹) and drain-induced barrier lowering (DIBL) = 88 (mV V⁻¹) were also measured at V _ds = 0.5 V; subthreshold swing (SS) = 77 and 83 (mV dec⁻¹) was obtained at V _ds = 0.05 and 0.5 V, respectively. Immunity to short-channel effects and superior transfer characteristics are attributed to the gate controllability of the fin structure. This work demonstrates the capability of inversion-mode InGaAs FinFETs in the realm of high-frequency applications.

Original language	English
Article number	091004
Journal	Applied Physics Express
Volume	16
Issue number	9
DOIs	https://doi.org/10.35848/1882-0786/acf1f0
State	Published - 1 Sep 2023

Keywords

FinFETs
InGaAs
inversion mode
transition frequency

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10.35848/1882-0786/acf1f0

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title = "Inversion-mode InGaAs FinFETs for RF applications",

abstract = "In this study, we present an inversion-mode InGaAs FinFETs with transition frequency (f T) = 263 GHz and maximum oscillation frequency (f max) = 70 GHz. In addition, peak transconductance (g m) = 1976 (μS μm−1) and drain-induced barrier lowering (DIBL) = 88 (mV V−1) were also measured at V ds = 0.5 V; subthreshold swing (SS) = 77 and 83 (mV dec−1) was obtained at V ds = 0.05 and 0.5 V, respectively. Immunity to short-channel effects and superior transfer characteristics are attributed to the gate controllability of the fin structure. This work demonstrates the capability of inversion-mode InGaAs FinFETs in the realm of high-frequency applications.",

keywords = "FinFETs, InGaAs, inversion mode, transition frequency",

author = "Wu, {Jing Yuan} and Ping Huang and Luc, {Quang Ho} and Chiang, {Yung Chun} and Yu, {Hsiang Chan} and Chen, {Mu Yu} and {Yi Chang}, Edward",

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AU - Wu, Jing Yuan

AU - Huang, Ping

AU - Luc, Quang Ho

AU - Chiang, Yung Chun

AU - Yu, Hsiang Chan

AU - Chen, Mu Yu

AU - Yi Chang, Edward

PY - 2023/9/1

Y1 - 2023/9/1

N2 - In this study, we present an inversion-mode InGaAs FinFETs with transition frequency (f T) = 263 GHz and maximum oscillation frequency (f max) = 70 GHz. In addition, peak transconductance (g m) = 1976 (μS μm−1) and drain-induced barrier lowering (DIBL) = 88 (mV V−1) were also measured at V ds = 0.5 V; subthreshold swing (SS) = 77 and 83 (mV dec−1) was obtained at V ds = 0.05 and 0.5 V, respectively. Immunity to short-channel effects and superior transfer characteristics are attributed to the gate controllability of the fin structure. This work demonstrates the capability of inversion-mode InGaAs FinFETs in the realm of high-frequency applications.

AB - In this study, we present an inversion-mode InGaAs FinFETs with transition frequency (f T) = 263 GHz and maximum oscillation frequency (f max) = 70 GHz. In addition, peak transconductance (g m) = 1976 (μS μm−1) and drain-induced barrier lowering (DIBL) = 88 (mV V−1) were also measured at V ds = 0.5 V; subthreshold swing (SS) = 77 and 83 (mV dec−1) was obtained at V ds = 0.05 and 0.5 V, respectively. Immunity to short-channel effects and superior transfer characteristics are attributed to the gate controllability of the fin structure. This work demonstrates the capability of inversion-mode InGaAs FinFETs in the realm of high-frequency applications.

KW - FinFETs

KW - InGaAs

KW - inversion mode

KW - transition frequency

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VL - 16

JO - Applied Physics Express

JF - Applied Physics Express

IS - 9

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ER -

Inversion-mode InGaAs FinFETs for RF applications

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