Intrinsic Transconductance Extraction for Deep-Submicrometer MOSFET's

J. Chung, M. C. Jeng, G. May, P. K. Ko, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Intrinsic transconductance gmi is an important parameter for characterizing MOSFET's. As device dimensions approach the deep-submicrometer range, conventional methods of correcting for the source-drain resistance effect must be reexamined. Significant error in the extracted gmi Can arise from source-drain resistance asymmetry. A simple procedure is outlined to either correct for or to avoid this source of error. Using deep-submicrometer devices, experimental results are presented to demonstrate the severity of the potential error and to verify the applicability of the proposed technique. A method is also demonstrated which extracts the individual values of the source Rs and drain RD resistances.

Original languageEnglish
Pages (from-to)140-142
Number of pages3
JournalIEEE Transactions on Electron Devices
Issue number1
StatePublished - 1 Jan 1989


Dive into the research topics of 'Intrinsic Transconductance Extraction for Deep-Submicrometer MOSFET's'. Together they form a unique fingerprint.

Cite this