Intrinsic parameter fluctuations on current mirror circuit with different aspect ratio of 16-nm Multi-Gate MOSFET

Hui Wen Cheng; Chun Yen Yiu; Thet Thet Khaing; Yiming Li

doi:10.1109/SNW.2010.5562570

Intrinsic parameter fluctuations on current mirror circuit with different aspect ratio of 16-nm Multi-Gate MOSFET

Hui Wen Cheng, Chun Yen Yiu, Thet Thet Khaing, Yiming Li^*

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height/the fin width) of 16-nm multi-gate MOSFET and device's intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For n-and p-type current mirror circuits, the fluctuations dominated by RDF and WKF, respectively, could be suppressed by high AR of devices due to improved driving current. For n-and p-type current mirror circuits, IOUT fluctuation dominated by RDF and WKF in FinFET (AR = 2) is 2.8 and 2.5 times smaller than that of quasi-planar (AR = 0.5) device, respectively.

Original language	English
Title of host publication	2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs	https://doi.org/10.1109/SNW.2010.5562570
State	Published - 2010
Event	2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States Duration: 13 Jun 2010 → 14 Jun 2010

Publication series

Name	2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference	2010 15th Silicon Nanoelectronics Workshop, SNW 2010
Country/Territory	United States
City	Honolulu, HI
Period	13/06/10 → 14/06/10

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10.1109/SNW.2010.5562570

Cite this

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title = "Intrinsic parameter fluctuations on current mirror circuit with different aspect ratio of 16-nm Multi-Gate MOSFET",

abstract = "In this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height/the fin width) of 16-nm multi-gate MOSFET and device's intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For n-and p-type current mirror circuits, the fluctuations dominated by RDF and WKF, respectively, could be suppressed by high AR of devices due to improved driving current. For n-and p-type current mirror circuits, IOUT fluctuation dominated by RDF and WKF in FinFET (AR = 2) is 2.8 and 2.5 times smaller than that of quasi-planar (AR = 0.5) device, respectively.",

author = "Cheng, {Hui Wen} and Yiu, {Chun Yen} and Khaing, {Thet Thet} and Yiming Li",

year = "2010",

doi = "10.1109/SNW.2010.5562570",

language = "English",

isbn = "9781424477272",

series = "2010 Silicon Nanoelectronics Workshop, SNW 2010",

booktitle = "2010 Silicon Nanoelectronics Workshop, SNW 2010",

note = "2010 15th Silicon Nanoelectronics Workshop, SNW 2010 ; Conference date: 13-06-2010 Through 14-06-2010",

}

Cheng, HW, Yiu, CY, Khaing, TT & Li, Y 2010, Intrinsic parameter fluctuations on current mirror circuit with different aspect ratio of 16-nm Multi-Gate MOSFET. in 2010 Silicon Nanoelectronics Workshop, SNW 2010., 5562570, 2010 Silicon Nanoelectronics Workshop, SNW 2010, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, Honolulu, HI, United States, 13/06/10. https://doi.org/10.1109/SNW.2010.5562570

Intrinsic parameter fluctuations on current mirror circuit with different aspect ratio of 16-nm Multi-Gate MOSFET. / Cheng, Hui Wen; Yiu, Chun Yen; Khaing, Thet Thet et al.
2010 Silicon Nanoelectronics Workshop, SNW 2010. 2010. 5562570 (2010 Silicon Nanoelectronics Workshop, SNW 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Intrinsic parameter fluctuations on current mirror circuit with different aspect ratio of 16-nm Multi-Gate MOSFET

AU - Cheng, Hui Wen

AU - Yiu, Chun Yen

AU - Khaing, Thet Thet

AU - Li, Yiming

PY - 2010

Y1 - 2010

N2 - In this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height/the fin width) of 16-nm multi-gate MOSFET and device's intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For n-and p-type current mirror circuits, the fluctuations dominated by RDF and WKF, respectively, could be suppressed by high AR of devices due to improved driving current. For n-and p-type current mirror circuits, IOUT fluctuation dominated by RDF and WKF in FinFET (AR = 2) is 2.8 and 2.5 times smaller than that of quasi-planar (AR = 0.5) device, respectively.

AB - In this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height/the fin width) of 16-nm multi-gate MOSFET and device's intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For n-and p-type current mirror circuits, the fluctuations dominated by RDF and WKF, respectively, could be suppressed by high AR of devices due to improved driving current. For n-and p-type current mirror circuits, IOUT fluctuation dominated by RDF and WKF in FinFET (AR = 2) is 2.8 and 2.5 times smaller than that of quasi-planar (AR = 0.5) device, respectively.

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M3 - Conference contribution

AN - SCOPUS:77957997841

SN - 9781424477272

T3 - 2010 Silicon Nanoelectronics Workshop, SNW 2010

BT - 2010 Silicon Nanoelectronics Workshop, SNW 2010

T2 - 2010 15th Silicon Nanoelectronics Workshop, SNW 2010

Y2 - 13 June 2010 through 14 June 2010

ER -

Intrinsic parameter fluctuations on current mirror circuit with different aspect ratio of 16-nm Multi-Gate MOSFET

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