Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors

Sekhar Reddy Kola; Yiming Li; Min Hui Chuang

doi:10.1109/ISQED57927.2023.10129391

Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors

Sekhar Reddy Kola, Yiming Li^*, Min Hui Chuang

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and the random dopant fluctuation (RDF) of CFETs are statistically estimated using an experimentally validated device simulation technique. Among five factors of PVE, the channel thickness (TNch/TPch), the channel width (Wch), and the gate length (LG) are significant. Owing to superior GAA channel control and increased effective gate area, both WKF and RDF are suppressed. Notably, the PVE on both N-/P-FETs of GAA Si CFET induce the largest off-state current fluctuations of 80% and 278%, respectively, because the device characteristic is very sensitive to the layer thickness and width of channel.

Original language	English
Title of host publication	Proceedings of the 24th International Symposium on Quality Electronic Design, ISQED 2023
Publisher	IEEE Computer Society
ISBN (Electronic)	9798350334753
DOIs	https://doi.org/10.1109/ISQED57927.2023.10129391
State	Published - 2023
Event	24th International Symposium on Quality Electronic Design, ISQED 2023 - San Francisco, United States Duration: 5 Apr 2023 → 7 Apr 2023

Publication series

Name	Proceedings - International Symposium on Quality Electronic Design, ISQED
Volume	2023-April
ISSN (Print)	1948-3287
ISSN (Electronic)	1948-3295

Conference

Conference	24th International Symposium on Quality Electronic Design, ISQED 2023
Country/Territory	United States
City	San Francisco
Period	5/04/23 → 7/04/23

Keywords

Complementary filed-effect-transistors
and statistical device simulation
gate-all-around
nanosheet
process variation effect
random dopant fluctuation
work function fluctuation

Access to Document

10.1109/ISQED57927.2023.10129391

Cite this

Kola, S. R., Li, Y., & Chuang, M. H. (2023). Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors. In Proceedings of the 24th International Symposium on Quality Electronic Design, ISQED 2023 (Proceedings - International Symposium on Quality Electronic Design, ISQED; Vol. 2023-April). IEEE Computer Society. https://doi.org/10.1109/ISQED57927.2023.10129391

Kola, Sekhar Reddy ; Li, Yiming ; Chuang, Min Hui. / Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors. Proceedings of the 24th International Symposium on Quality Electronic Design, ISQED 2023. IEEE Computer Society, 2023. (Proceedings - International Symposium on Quality Electronic Design, ISQED).

@inproceedings{5fdc7c1a34034c7dbb3d04de7fe47c2d,

title = "Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors",

abstract = "We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and the random dopant fluctuation (RDF) of CFETs are statistically estimated using an experimentally validated device simulation technique. Among five factors of PVE, the channel thickness (TNch/TPch), the channel width (Wch), and the gate length (LG) are significant. Owing to superior GAA channel control and increased effective gate area, both WKF and RDF are suppressed. Notably, the PVE on both N-/P-FETs of GAA Si CFET induce the largest off-state current fluctuations of 80% and 278%, respectively, because the device characteristic is very sensitive to the layer thickness and width of channel.",

keywords = "Complementary filed-effect-transistors, and statistical device simulation, gate-all-around, nanosheet, process variation effect, random dopant fluctuation, work function fluctuation",

author = "Kola, {Sekhar Reddy} and Yiming Li and Chuang, {Min Hui}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 24th International Symposium on Quality Electronic Design, ISQED 2023 ; Conference date: 05-04-2023 Through 07-04-2023",

year = "2023",

doi = "10.1109/ISQED57927.2023.10129391",

language = "English",

series = "Proceedings - International Symposium on Quality Electronic Design, ISQED",

publisher = "IEEE Computer Society",

booktitle = "Proceedings of the 24th International Symposium on Quality Electronic Design, ISQED 2023",

address = "美國",

}

Kola, SR, Li, Y & Chuang, MH 2023, Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors. in Proceedings of the 24th International Symposium on Quality Electronic Design, ISQED 2023. Proceedings - International Symposium on Quality Electronic Design, ISQED, vol. 2023-April, IEEE Computer Society, 24th International Symposium on Quality Electronic Design, ISQED 2023, San Francisco, United States, 5/04/23. https://doi.org/10.1109/ISQED57927.2023.10129391

Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors. / Kola, Sekhar Reddy; Li, Yiming; Chuang, Min Hui.
Proceedings of the 24th International Symposium on Quality Electronic Design, ISQED 2023. IEEE Computer Society, 2023. (Proceedings - International Symposium on Quality Electronic Design, ISQED; Vol. 2023-April).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors

AU - Kola, Sekhar Reddy

AU - Li, Yiming

AU - Chuang, Min Hui

PY - 2023

Y1 - 2023

N2 - We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and the random dopant fluctuation (RDF) of CFETs are statistically estimated using an experimentally validated device simulation technique. Among five factors of PVE, the channel thickness (TNch/TPch), the channel width (Wch), and the gate length (LG) are significant. Owing to superior GAA channel control and increased effective gate area, both WKF and RDF are suppressed. Notably, the PVE on both N-/P-FETs of GAA Si CFET induce the largest off-state current fluctuations of 80% and 278%, respectively, because the device characteristic is very sensitive to the layer thickness and width of channel.

AB - We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and the random dopant fluctuation (RDF) of CFETs are statistically estimated using an experimentally validated device simulation technique. Among five factors of PVE, the channel thickness (TNch/TPch), the channel width (Wch), and the gate length (LG) are significant. Owing to superior GAA channel control and increased effective gate area, both WKF and RDF are suppressed. Notably, the PVE on both N-/P-FETs of GAA Si CFET induce the largest off-state current fluctuations of 80% and 278%, respectively, because the device characteristic is very sensitive to the layer thickness and width of channel.

KW - Complementary filed-effect-transistors

KW - and statistical device simulation

KW - gate-all-around

KW - nanosheet

KW - process variation effect

KW - random dopant fluctuation

KW - work function fluctuation

UR - http://www.scopus.com/inward/record.url?scp=85161496046&partnerID=8YFLogxK

U2 - 10.1109/ISQED57927.2023.10129391

DO - 10.1109/ISQED57927.2023.10129391

M3 - Conference contribution

AN - SCOPUS:85161496046

T3 - Proceedings - International Symposium on Quality Electronic Design, ISQED

BT - Proceedings of the 24th International Symposium on Quality Electronic Design, ISQED 2023

PB - IEEE Computer Society

T2 - 24th International Symposium on Quality Electronic Design, ISQED 2023

Y2 - 5 April 2023 through 7 April 2023

ER -

Kola SR, Li Y, Chuang MH. Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors. In Proceedings of the 24th International Symposium on Quality Electronic Design, ISQED 2023. IEEE Computer Society. 2023. (Proceedings - International Symposium on Quality Electronic Design, ISQED). doi: 10.1109/ISQED57927.2023.10129391

Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors

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Keywords

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