Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors

Sekhar Reddy Kola, Yiming Li*, Min Hui Chuang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and the random dopant fluctuation (RDF) of CFETs are statistically estimated using an experimentally validated device simulation technique. Among five factors of PVE, the channel thickness (TNch/TPch), the channel width (Wch), and the gate length (LG) are significant. Owing to superior GAA channel control and increased effective gate area, both WKF and RDF are suppressed. Notably, the PVE on both N-/P-FETs of GAA Si CFET induce the largest off-state current fluctuations of 80% and 278%, respectively, because the device characteristic is very sensitive to the layer thickness and width of channel.

Original languageEnglish
Title of host publicationProceedings of the 24th International Symposium on Quality Electronic Design, ISQED 2023
PublisherIEEE Computer Society
ISBN (Electronic)9798350334753
DOIs
StatePublished - 2023
Event24th International Symposium on Quality Electronic Design, ISQED 2023 - San Francisco, United States
Duration: 5 Apr 20237 Apr 2023

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
Volume2023-April
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Conference

Conference24th International Symposium on Quality Electronic Design, ISQED 2023
Country/TerritoryUnited States
CitySan Francisco
Period5/04/237/04/23

Keywords

  • and statistical device simulation
  • Complementary filed-effect-transistors
  • gate-all-around
  • nanosheet
  • process variation effect
  • random dopant fluctuation
  • work function fluctuation

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