Intriguing field-effect-transistor performance of two-dimensional layered and crystalline CrI3

Ranjit A. Patil; Hao Wei Tu; Ming Hsing Jen; Jing Jia Lin; Ching Cherng Wu; Chun Chuen Yang; Duy Van Pham; Chih Hung Tsai; Chien Chih Lai; Yung Liou; Wen-Bin Jian; Yuan Ron Ma

doi:10.1016/j.mtphys.2019.100174

Intriguing field-effect-transistor performance of two-dimensional layered and crystalline CrI₃

Ranjit A. Patil, Hao Wei Tu, Ming Hsing Jen, Jing Jia Lin, Ching Cherng Wu, Chun Chuen Yang, Duy Van Pham, Chih Hung Tsai, Chien Chih Lai, Yung Liou, Wen-Bin Jian^*, Yuan Ron Ma^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

There are many candidate materials that can be used as channel materials for the next-generation field effect transistors (FETs). CrI₃ is one of the particular candidates for application in FET, because it is a two-dimensional (2D) ferromagnet and has giant tunneling magnetoresistance. The ferromagnetic nature extends to not only electronics but also spintronics. In this study, the large-area, layered, and crystalline 2D CrI₃ were synthesized by horizontal Bridgman method. The suspended CrI₃ FETs were fabricated for explorations of intrinsic electron transport in the CrI₃ channel and of electrical contact problems. The suspended FET structure lets the CrI₃ channel free from trapping charges in the SiO₂-capped Si substrate. The on–off ratio of the suspended CrI₃ FET is up to 10⁴, making the 2D layered CrI₃ potential for future FETs. The investigations of the mobility and the interface-trap density at various temperatures reveal that the trapping charges as well as the interface-trap densities are increased with further gas adsorption on the surface of the CrI₃ flake. The performance of the suspended CrI₃ FET can be improved, if the gas adsorption problem can be carefully treated.

Original language	English
Article number	100174
Pages (from-to)	1-7
Number of pages	7
Journal	Materials Today Physics
Volume	12
DOIs	https://doi.org/10.1016/j.mtphys.2019.100174
State	Published - Mar 2020

Keywords

Chromium triiodide
Field effect transistors
Large-area
Two-dimensional materials

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10.1016/j.mtphys.2019.100174

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title = "Intriguing field-effect-transistor performance of two-dimensional layered and crystalline CrI3",

abstract = "There are many candidate materials that can be used as channel materials for the next-generation field effect transistors (FETs). CrI3 is one of the particular candidates for application in FET, because it is a two-dimensional (2D) ferromagnet and has giant tunneling magnetoresistance. The ferromagnetic nature extends to not only electronics but also spintronics. In this study, the large-area, layered, and crystalline 2D CrI3 were synthesized by horizontal Bridgman method. The suspended CrI3 FETs were fabricated for explorations of intrinsic electron transport in the CrI3 channel and of electrical contact problems. The suspended FET structure lets the CrI3 channel free from trapping charges in the SiO2-capped Si substrate. The on–off ratio of the suspended CrI3 FET is up to 104, making the 2D layered CrI3 potential for future FETs. The investigations of the mobility and the interface-trap density at various temperatures reveal that the trapping charges as well as the interface-trap densities are increased with further gas adsorption on the surface of the CrI3 flake. The performance of the suspended CrI3 FET can be improved, if the gas adsorption problem can be carefully treated.",

keywords = "Chromium triiodide, Field effect transistors, Large-area, Two-dimensional materials",

author = "Patil, {Ranjit A.} and Tu, {Hao Wei} and Jen, {Ming Hsing} and Lin, {Jing Jia} and Wu, {Ching Cherng} and Yang, {Chun Chuen} and Pham, {Duy Van} and Tsai, {Chih Hung} and Lai, {Chien Chih} and Yung Liou and Wen-Bin Jian and Ma, {Yuan Ron}",

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doi = "10.1016/j.mtphys.2019.100174",

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AU - Patil, Ranjit A.

AU - Tu, Hao Wei

AU - Jen, Ming Hsing

AU - Lin, Jing Jia

AU - Wu, Ching Cherng

AU - Yang, Chun Chuen

AU - Pham, Duy Van

AU - Tsai, Chih Hung

AU - Lai, Chien Chih

AU - Liou, Yung

AU - Jian, Wen-Bin

AU - Ma, Yuan Ron

PY - 2020/3

Y1 - 2020/3

N2 - There are many candidate materials that can be used as channel materials for the next-generation field effect transistors (FETs). CrI3 is one of the particular candidates for application in FET, because it is a two-dimensional (2D) ferromagnet and has giant tunneling magnetoresistance. The ferromagnetic nature extends to not only electronics but also spintronics. In this study, the large-area, layered, and crystalline 2D CrI3 were synthesized by horizontal Bridgman method. The suspended CrI3 FETs were fabricated for explorations of intrinsic electron transport in the CrI3 channel and of electrical contact problems. The suspended FET structure lets the CrI3 channel free from trapping charges in the SiO2-capped Si substrate. The on–off ratio of the suspended CrI3 FET is up to 104, making the 2D layered CrI3 potential for future FETs. The investigations of the mobility and the interface-trap density at various temperatures reveal that the trapping charges as well as the interface-trap densities are increased with further gas adsorption on the surface of the CrI3 flake. The performance of the suspended CrI3 FET can be improved, if the gas adsorption problem can be carefully treated.

AB - There are many candidate materials that can be used as channel materials for the next-generation field effect transistors (FETs). CrI3 is one of the particular candidates for application in FET, because it is a two-dimensional (2D) ferromagnet and has giant tunneling magnetoresistance. The ferromagnetic nature extends to not only electronics but also spintronics. In this study, the large-area, layered, and crystalline 2D CrI3 were synthesized by horizontal Bridgman method. The suspended CrI3 FETs were fabricated for explorations of intrinsic electron transport in the CrI3 channel and of electrical contact problems. The suspended FET structure lets the CrI3 channel free from trapping charges in the SiO2-capped Si substrate. The on–off ratio of the suspended CrI3 FET is up to 104, making the 2D layered CrI3 potential for future FETs. The investigations of the mobility and the interface-trap density at various temperatures reveal that the trapping charges as well as the interface-trap densities are increased with further gas adsorption on the surface of the CrI3 flake. The performance of the suspended CrI3 FET can be improved, if the gas adsorption problem can be carefully treated.

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KW - Two-dimensional materials

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Intriguing field-effect-transistor performance of two-dimensional layered and crystalline CrI₃

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