Intra-field gate CD variability and its impact on circuit performance

Michael Orshansky; Linda Milor; Ly Nguyen; Gene Hill; Yeng Peng; Chen-Ming Hu

doi:10.1109/IEDM.1999.824197

Intra-field gate CD variability and its impact on circuit performance

Michael Orshansky^*
, Linda Milor
, Ly Nguyen
, Gene Hill
, Yeng Peng
, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

Statistical analysis of an advanced CMOS process reveals a significant systematic within-field variability of gate CD strongly dependent on the local layout patterns. We present a novel modeling methodology for accurate prediction of the effect of such CD variability on circuit performance that enables statistical design for increased performance and yield. We also propose a mask-level gate CD correction algorithm allowing significant reduction of overall variability and provide a model to evaluate the effectiveness of correction.

Original language	English
Pages (from-to)	479-482
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1999.824197
State	Published - 1999
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999

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10.1109/IEDM.1999.824197

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title = "Intra-field gate CD variability and its impact on circuit performance",

abstract = "Statistical analysis of an advanced CMOS process reveals a significant systematic within-field variability of gate CD strongly dependent on the local layout patterns. We present a novel modeling methodology for accurate prediction of the effect of such CD variability on circuit performance that enables statistical design for increased performance and yield. We also propose a mask-level gate CD correction algorithm allowing significant reduction of overall variability and provide a model to evaluate the effectiveness of correction.",

author = "Michael Orshansky and Linda Milor and Ly Nguyen and Gene Hill and Yeng Peng and Chen-Ming Hu",

year = "1999",

doi = "10.1109/IEDM.1999.824197",

language = "English",

pages = "479--482",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

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TY - JOUR

T1 - Intra-field gate CD variability and its impact on circuit performance

AU - Orshansky, Michael

AU - Milor, Linda

AU - Nguyen, Ly

AU - Hill, Gene

AU - Peng, Yeng

AU - Hu, Chen-Ming

PY - 1999

Y1 - 1999

N2 - Statistical analysis of an advanced CMOS process reveals a significant systematic within-field variability of gate CD strongly dependent on the local layout patterns. We present a novel modeling methodology for accurate prediction of the effect of such CD variability on circuit performance that enables statistical design for increased performance and yield. We also propose a mask-level gate CD correction algorithm allowing significant reduction of overall variability and provide a model to evaluate the effectiveness of correction.

AB - Statistical analysis of an advanced CMOS process reveals a significant systematic within-field variability of gate CD strongly dependent on the local layout patterns. We present a novel modeling methodology for accurate prediction of the effect of such CD variability on circuit performance that enables statistical design for increased performance and yield. We also propose a mask-level gate CD correction algorithm allowing significant reduction of overall variability and provide a model to evaluate the effectiveness of correction.

UR - https://www.scopus.com/pages/publications/0033315074

U2 - 10.1109/IEDM.1999.824197

DO - 10.1109/IEDM.1999.824197

M3 - Conference article

AN - SCOPUS:0033315074

SN - 0163-1918

SP - 479

EP - 482

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Intra-field gate CD variability and its impact on circuit performance

Abstract

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