Internal structure and electrical properties of Ge quantum dot in single-electron transistors

K. H. Chen; I. H. Chen; Pei-Wen Li

doi:10.1109/SNW.2010.5562546

Internal structure and electrical properties of Ge quantum dot in single-electron transistors

K. H. Chen, I. H. Chen, Pei-Wen Li

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have developed a simple, manageable, and selforganized manner - thermally oxidizing SiGe nanocavity for precisely controlling Ge quantum dot (QD) number, position, and tunnel path, which is crucial for effective single-electron tunneling devices. The internal structure properties of Ge QDs were systematically characterized. The effectiveness of Ge QD placement is evidenced by high performance Ge QD single electron transistors (SETs), featuring with clear Coulomb staircase and Coulomb-blockade oscillation behaviors at room temperature.

Original language	English
Title of host publication	2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs	https://doi.org/10.1109/SNW.2010.5562546
State	Published - 2010
Event	2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States Duration: 13 Jun 2010 → 14 Jun 2010

Publication series

Name	2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference	2010 15th Silicon Nanoelectronics Workshop, SNW 2010
Country/Territory	United States
City	Honolulu, HI
Period	13/06/10 → 14/06/10

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10.1109/SNW.2010.5562546

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title = "Internal structure and electrical properties of Ge quantum dot in single-electron transistors",

abstract = "We have developed a simple, manageable, and selforganized manner - thermally oxidizing SiGe nanocavity for precisely controlling Ge quantum dot (QD) number, position, and tunnel path, which is crucial for effective single-electron tunneling devices. The internal structure properties of Ge QDs were systematically characterized. The effectiveness of Ge QD placement is evidenced by high performance Ge QD single electron transistors (SETs), featuring with clear Coulomb staircase and Coulomb-blockade oscillation behaviors at room temperature.",

author = "Chen, {K. H.} and Chen, {I. H.} and Pei-Wen Li",

year = "2010",

doi = "10.1109/SNW.2010.5562546",

language = "English",

isbn = "9781424477272",

series = "2010 Silicon Nanoelectronics Workshop, SNW 2010",

booktitle = "2010 Silicon Nanoelectronics Workshop, SNW 2010",

note = "2010 15th Silicon Nanoelectronics Workshop, SNW 2010 ; Conference date: 13-06-2010 Through 14-06-2010",

}

Chen, KH, Chen, IH & Li, P-W 2010, Internal structure and electrical properties of Ge quantum dot in single-electron transistors. in 2010 Silicon Nanoelectronics Workshop, SNW 2010., 5562546, 2010 Silicon Nanoelectronics Workshop, SNW 2010, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, Honolulu, HI, United States, 13/06/10. https://doi.org/10.1109/SNW.2010.5562546

TY - GEN

T1 - Internal structure and electrical properties of Ge quantum dot in single-electron transistors

AU - Chen, K. H.

AU - Chen, I. H.

AU - Li, Pei-Wen

PY - 2010

Y1 - 2010

N2 - We have developed a simple, manageable, and selforganized manner - thermally oxidizing SiGe nanocavity for precisely controlling Ge quantum dot (QD) number, position, and tunnel path, which is crucial for effective single-electron tunneling devices. The internal structure properties of Ge QDs were systematically characterized. The effectiveness of Ge QD placement is evidenced by high performance Ge QD single electron transistors (SETs), featuring with clear Coulomb staircase and Coulomb-blockade oscillation behaviors at room temperature.

AB - We have developed a simple, manageable, and selforganized manner - thermally oxidizing SiGe nanocavity for precisely controlling Ge quantum dot (QD) number, position, and tunnel path, which is crucial for effective single-electron tunneling devices. The internal structure properties of Ge QDs were systematically characterized. The effectiveness of Ge QD placement is evidenced by high performance Ge QD single electron transistors (SETs), featuring with clear Coulomb staircase and Coulomb-blockade oscillation behaviors at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=77958004560&partnerID=8YFLogxK

U2 - 10.1109/SNW.2010.5562546

DO - 10.1109/SNW.2010.5562546

M3 - Conference contribution

AN - SCOPUS:77958004560

SN - 9781424477272

T3 - 2010 Silicon Nanoelectronics Workshop, SNW 2010

BT - 2010 Silicon Nanoelectronics Workshop, SNW 2010

T2 - 2010 15th Silicon Nanoelectronics Workshop, SNW 2010

Y2 - 13 June 2010 through 14 June 2010

ER -

Internal structure and electrical properties of Ge quantum dot in single-electron transistors

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