Internal current amplification induced by dielectric hole trapping in monolayer MoS₂ transistor

Keyphrases

• Dielectric 100%
• Hole Trapping 100%
• Internal Current 100%
• Current Amplification 100%
• Monolayer MoS2 Transistors 100%
• Positive Feedback 66%
• Molybdenite 66%
• Tantalum Oxide 66%
• Steep Subthreshold Slope 66%
• Highly Sensitive 33%
• Lateral Electric Field 33%
• Schottky Barrier 33%
• Hole Generation 33%
• Amplification Mechanism 33%
• Drain Bias 33%
• Carrier Transport 33%
• Atomically Thin 33%
• Thin Thickness 33%
• Layered Transition Metal Dichalcogenides 33%
• Back-gate Transistors 33%
• Substrate Material 33%
• Oxide Substrates 33%

Material Science

• Monolayers 100%
• Transistor 100%
• Tantalum Oxides 100%
• Dielectric Material 100%
• Transition Metal Dichalcogenide 50%
• Schottky Barrier 50%
• Carrier Transport 50%