Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits

Ming-Dou Ker; Chien Ming Lee

doi:10.1109/ISCAS.2003.1205559

Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits

Ming-Dou Ker^*, Chien Ming Lee

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

The power gain and noise figure of two kinds of diode structures in a 0.25-μm CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (∼GHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.

Original language	English
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	1
DOIs	https://doi.org/10.1109/ISCAS.2003.1205559
State	Published - 14 Jul 2003
Event	Proceedings of the 2003 IEEE International Symposium on Circuits and Systems - Bangkok, Thailand Duration: 25 May 2003 → 28 May 2003

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@article{8cceb683c8c84ddcb0ff17de6150efc9,

title = "Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits",

abstract = "The power gain and noise figure of two kinds of diode structures in a 0.25-μm CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (∼GHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.",

author = "Ming-Dou Ker and Lee, {Chien Ming}",

year = "2003",

month = jul,

day = "14",

doi = "10.1109/ISCAS.2003.1205559",

language = "English",

volume = "1",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

issn = "0271-4310",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 2003 IEEE International Symposium on Circuits and Systems ; Conference date: 25-05-2003 Through 28-05-2003",

}

TY - JOUR

T1 - Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits

AU - Ker, Ming-Dou

AU - Lee, Chien Ming

PY - 2003/7/14

Y1 - 2003/7/14

N2 - The power gain and noise figure of two kinds of diode structures in a 0.25-μm CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (∼GHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.

AB - The power gain and noise figure of two kinds of diode structures in a 0.25-μm CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (∼GHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.

UR - http://www.scopus.com/inward/record.url?scp=0037820487&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2003.1205559

DO - 10.1109/ISCAS.2003.1205559

M3 - Conference article

AN - SCOPUS:0037820487

SN - 0271-4310

VL - 1

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

T2 - Proceedings of the 2003 IEEE International Symposium on Circuits and Systems

Y2 - 25 May 2003 through 28 May 2003

ER -

Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits

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