Interfacial reaction between amorphous silicon and palladium thin films

H. T.G. Hentzell; P. A. Psaras; King-Ning Tu

doi:10.1016/0167-577X(85)90016-3

Interfacial reaction between amorphous silicon and palladium thin films

H. T.G. Hentzell^*, P. A. Psaras, King-Ning Tu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Interfacial reactions between amorphous Si and Pd films of thickness of 1, 5, 50 and 200 nm in the as-deposited state and after annealing from 200 to 500°C have been studied by transmission electron microscopy and Rutherford backscattering spectroscopy. An amorphous phase is observed in the as-deposited state in samples of 1 nm Pd on α-Si, yet Pd₂Si is observed in the as-deposited and annealed states in thicker films. The growth of Pd₂Si from 200 to 235°C is diffusion controlled with an activation energy of 1.25 eV. Enhanced crystallization of remaining α-Si in contact to Pd₂Si occurs between 400 and 500°C.

Original language	English
Pages (from-to)	255-260
Number of pages	6
Journal	Materials Letters
Volume	3
Issue number	7-8
DOIs	https://doi.org/10.1016/0167-577X(85)90016-3
State	Published - 1 Jan 1985

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@article{29b55991e34f403bb2bbcc3e74e178fd,

title = "Interfacial reaction between amorphous silicon and palladium thin films",

abstract = "Interfacial reactions between amorphous Si and Pd films of thickness of 1, 5, 50 and 200 nm in the as-deposited state and after annealing from 200 to 500°C have been studied by transmission electron microscopy and Rutherford backscattering spectroscopy. An amorphous phase is observed in the as-deposited state in samples of 1 nm Pd on α-Si, yet Pd2Si is observed in the as-deposited and annealed states in thicker films. The growth of Pd2Si from 200 to 235°C is diffusion controlled with an activation energy of 1.25 eV. Enhanced crystallization of remaining α-Si in contact to Pd2Si occurs between 400 and 500°C.",

author = "Hentzell, {H. T.G.} and Psaras, {P. A.} and King-Ning Tu",

year = "1985",

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doi = "10.1016/0167-577X(85)90016-3",

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journal = "Materials Letters",

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T1 - Interfacial reaction between amorphous silicon and palladium thin films

AU - Hentzell, H. T.G.

AU - Psaras, P. A.

AU - Tu, King-Ning

PY - 1985/1/1

Y1 - 1985/1/1

N2 - Interfacial reactions between amorphous Si and Pd films of thickness of 1, 5, 50 and 200 nm in the as-deposited state and after annealing from 200 to 500°C have been studied by transmission electron microscopy and Rutherford backscattering spectroscopy. An amorphous phase is observed in the as-deposited state in samples of 1 nm Pd on α-Si, yet Pd2Si is observed in the as-deposited and annealed states in thicker films. The growth of Pd2Si from 200 to 235°C is diffusion controlled with an activation energy of 1.25 eV. Enhanced crystallization of remaining α-Si in contact to Pd2Si occurs between 400 and 500°C.

AB - Interfacial reactions between amorphous Si and Pd films of thickness of 1, 5, 50 and 200 nm in the as-deposited state and after annealing from 200 to 500°C have been studied by transmission electron microscopy and Rutherford backscattering spectroscopy. An amorphous phase is observed in the as-deposited state in samples of 1 nm Pd on α-Si, yet Pd2Si is observed in the as-deposited and annealed states in thicker films. The growth of Pd2Si from 200 to 235°C is diffusion controlled with an activation energy of 1.25 eV. Enhanced crystallization of remaining α-Si in contact to Pd2Si occurs between 400 and 500°C.

UR - http://www.scopus.com/inward/record.url?scp=0022063426&partnerID=8YFLogxK

U2 - 10.1016/0167-577X(85)90016-3

DO - 10.1016/0167-577X(85)90016-3

M3 - Article

AN - SCOPUS:0022063426

VL - 3

SP - 255

EP - 260

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

IS - 7-8

ER -

Interfacial reaction between amorphous silicon and palladium thin films

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