Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications

Yannick Raffel; Sunanda Thunder; Maximilian Lederer; Ricardo Olivo; Raik Hoffmann; Luca Pirro; Sven Beyer; Talha Chohan; Po Tsang Huang; Sourav De; Thomas Kampfe; Konrad Seidel; Johannes Heitman

doi:10.1109/ICICDT56182.2022.9933119

Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications

Yannick Raffel, Sunanda Thunder, Maximilian Lederer, Ricardo Olivo, Raik Hoffmann, Luca Pirro, Sven Beyer, Talha Chohan, Po Tsang Huang, Sourav De^*, Thomas Kampfe, Konrad Seidel, Johannes Heitman

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This article reports an improvement in the low- frequency noise characteristics in hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) by interfacial layer (IL) engineering. FeFET devices with silicon dioxide (SiO2) and silicon oxynitride (SiON) as IL were fabricated and characterised. FeFETs with SiON interfaces demonstrated an excellent improvement in variation, and low-frequency noise characteristics. The wider memory window for operation in FeFETs with SiON IL also allows for a higher noise tolerance during the inference operation. Finally, the evaluation of system performance by neuromorphic simulation shows that FeFET with SiON IL are highly immune to noise degradation and endurance, without retention penalty.

Original language	English
Title of host publication	Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022
Editors	Xuan-Tu Tran, Duy-Hieu Bui
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	8-11
Number of pages	4
ISBN (Electronic)	9781665459013
DOIs	https://doi.org/10.1109/ICICDT56182.2022.9933119
State	Published - 2022
Event	2022 IEEE International Conference on IC Design and Technology, ICICDT 2022 - Hanoi, Viet Nam Duration: 21 Sep 2022 → 23 Sep 2022

Publication series

Name	Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022

Conference

Conference	2022 IEEE International Conference on IC Design and Technology, ICICDT 2022
Country/Territory	Viet Nam
City	Hanoi
Period	21/09/22 → 23/09/22

Keywords

FeFET
Flicker noise
hafnium oxide
interface traps
interface treatments
neuromorphic computing

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10.1109/ICICDT56182.2022.9933119

Cite this

Raffel, Y., Thunder, S., Lederer, M., Olivo, R., Hoffmann, R., Pirro, L., Beyer, S., Chohan, T., Huang, P. T., De, S., Kampfe, T., Seidel, K., & Heitman, J. (2022). Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. In X.-T. Tran, & D.-H. Bui (Eds.), Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022 (pp. 8-11). (Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT56182.2022.9933119

Raffel, Yannick ; Thunder, Sunanda ; Lederer, Maximilian et al. / Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022. editor / Xuan-Tu Tran ; Duy-Hieu Bui. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 8-11 (Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022).

@inproceedings{24a37b799a534eea998f1007b0c15ecf,

title = "Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications",

abstract = "This article reports an improvement in the low- frequency noise characteristics in hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) by interfacial layer (IL) engineering. FeFET devices with silicon dioxide (SiO2) and silicon oxynitride (SiON) as IL were fabricated and characterised. FeFETs with SiON interfaces demonstrated an excellent improvement in variation, and low-frequency noise characteristics. The wider memory window for operation in FeFETs with SiON IL also allows for a higher noise tolerance during the inference operation. Finally, the evaluation of system performance by neuromorphic simulation shows that FeFET with SiON IL are highly immune to noise degradation and endurance, without retention penalty.",

keywords = "FeFET, Flicker noise, hafnium oxide, interface traps, interface treatments, neuromorphic computing",

author = "Yannick Raffel and Sunanda Thunder and Maximilian Lederer and Ricardo Olivo and Raik Hoffmann and Luca Pirro and Sven Beyer and Talha Chohan and Huang, {Po Tsang} and Sourav De and Thomas Kampfe and Konrad Seidel and Johannes Heitman",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022 ; Conference date: 21-09-2022 Through 23-09-2022",

year = "2022",

doi = "10.1109/ICICDT56182.2022.9933119",

language = "English",

series = "Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "8--11",

editor = "Xuan-Tu Tran and Duy-Hieu Bui",

booktitle = "Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022",

address = "United States",

}

Raffel, Y, Thunder, S, Lederer, M, Olivo, R, Hoffmann, R, Pirro, L, Beyer, S, Chohan, T, Huang, PT, De, S, Kampfe, T, Seidel, K & Heitman, J 2022, Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. in X-T Tran & D-H Bui (eds), Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022. Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022, Institute of Electrical and Electronics Engineers Inc., pp. 8-11, 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022, Hanoi, Viet Nam, 21/09/22. https://doi.org/10.1109/ICICDT56182.2022.9933119

Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. / Raffel, Yannick; Thunder, Sunanda; Lederer, Maximilian et al.
Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022. ed. / Xuan-Tu Tran; Duy-Hieu Bui. Institute of Electrical and Electronics Engineers Inc., 2022. p. 8-11 (Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications

AU - Raffel, Yannick

AU - Thunder, Sunanda

AU - Lederer, Maximilian

AU - Olivo, Ricardo

AU - Hoffmann, Raik

AU - Pirro, Luca

AU - Beyer, Sven

AU - Chohan, Talha

AU - Huang, Po Tsang

AU - De, Sourav

AU - Kampfe, Thomas

AU - Seidel, Konrad

AU - Heitman, Johannes

PY - 2022

Y1 - 2022

N2 - This article reports an improvement in the low- frequency noise characteristics in hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) by interfacial layer (IL) engineering. FeFET devices with silicon dioxide (SiO2) and silicon oxynitride (SiON) as IL were fabricated and characterised. FeFETs with SiON interfaces demonstrated an excellent improvement in variation, and low-frequency noise characteristics. The wider memory window for operation in FeFETs with SiON IL also allows for a higher noise tolerance during the inference operation. Finally, the evaluation of system performance by neuromorphic simulation shows that FeFET with SiON IL are highly immune to noise degradation and endurance, without retention penalty.

AB - This article reports an improvement in the low- frequency noise characteristics in hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) by interfacial layer (IL) engineering. FeFET devices with silicon dioxide (SiO2) and silicon oxynitride (SiON) as IL were fabricated and characterised. FeFETs with SiON interfaces demonstrated an excellent improvement in variation, and low-frequency noise characteristics. The wider memory window for operation in FeFETs with SiON IL also allows for a higher noise tolerance during the inference operation. Finally, the evaluation of system performance by neuromorphic simulation shows that FeFET with SiON IL are highly immune to noise degradation and endurance, without retention penalty.

KW - FeFET

KW - Flicker noise

KW - hafnium oxide

KW - interface traps

KW - interface treatments

KW - neuromorphic computing

UR - http://www.scopus.com/inward/record.url?scp=85142749317&partnerID=8YFLogxK

U2 - 10.1109/ICICDT56182.2022.9933119

DO - 10.1109/ICICDT56182.2022.9933119

M3 - Conference contribution

AN - SCOPUS:85142749317

T3 - Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022

SP - 8

EP - 11

BT - Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022

A2 - Tran, Xuan-Tu

A2 - Bui, Duy-Hieu

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022

Y2 - 21 September 2022 through 23 September 2022

ER -

Raffel Y, Thunder S, Lederer M, Olivo R, Hoffmann R, Pirro L et al. Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. In Tran XT, Bui DH, editors, Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 8-11. (Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022). doi: 10.1109/ICICDT56182.2022.9933119

Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications

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