@inproceedings{39870f96174b41238728f7366e3dd305,
title = "Interface morphology and electrical properties of bonded gaas/gaas wafers at different temperatures",
abstract = "The microstructure and electrical properties of p-GaAs/n-GaAs bonded interface were investigated. It was observed that when bonding temperature increased from 600 to 800°C, the thickness of oxide layer decreased. Current-voltage characteristic shows typical diode behaviors in these temperature ranges.",
author = "Chang, {S. C.} and Yew-Chuhg Wu and N. Chang",
year = "2012",
month = dec,
day = "1",
doi = "10.1149/05007.0109ecst",
language = "English",
isbn = "9781607683551",
series = "ECS Transactions",
number = "7",
pages = "109--112",
booktitle = "Semiconductor Wafer Bonding 12",
edition = "7",
note = "12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting ; Conference date: 07-10-2012 Through 12-10-2012",
}