TY - JOUR
T1 - Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory
AU - Wu, Facai
AU - Si, Shuyao
AU - Cao, Peng
AU - Wei, Wei
AU - Zhao, Xiaolong
AU - Shi, Tuo
AU - Zhang, Xumeng
AU - Ma, Jianwei
AU - Cao, Rongrong
AU - Liao, Lei
AU - Tseng, Tseung-Yuen
AU - Liu, Qi
N1 - Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/4
Y1 - 2019/4
N2 - Conductive-bridging random access memory (CBRAM), dominated by conductive filament (CF) formation/rupture, has received much attention due to its simple structure and outstanding performances for nonvolatile memory, neuromorphic computing, digital logic, and analog circuit. However, the negative-SET behavior can degrade device reliability and parameter uniformity. And large RESET current increases power consumption for memory applications. By inserting 2D material, molybdenum disulfide (MoS 2 ), for interface engineering with the device configuration of Ag/ZrO 2 /MoS 2 /Pt, the negative-SET behavior is eliminated, and the RESET current is reduced simultaneously. With the ion barrier property of MoS 2 , the CF can probably not penetrate the MoS 2 layer, thus eliminating the negative-SET behavior. And with the low thermal conductivity of MoS 2 , the internal temperature of the device would be relatively high at RESET, accelerating probably redox reactions. As a result, the RESET current is reduced by an order of magnitude. This interface engineering opens up a way in improving the resistive switching performances of CBRAM, and can be of great benefit to the potential applications of MoS 2 in next-generation data storage.
AB - Conductive-bridging random access memory (CBRAM), dominated by conductive filament (CF) formation/rupture, has received much attention due to its simple structure and outstanding performances for nonvolatile memory, neuromorphic computing, digital logic, and analog circuit. However, the negative-SET behavior can degrade device reliability and parameter uniformity. And large RESET current increases power consumption for memory applications. By inserting 2D material, molybdenum disulfide (MoS 2 ), for interface engineering with the device configuration of Ag/ZrO 2 /MoS 2 /Pt, the negative-SET behavior is eliminated, and the RESET current is reduced simultaneously. With the ion barrier property of MoS 2 , the CF can probably not penetrate the MoS 2 layer, thus eliminating the negative-SET behavior. And with the low thermal conductivity of MoS 2 , the internal temperature of the device would be relatively high at RESET, accelerating probably redox reactions. As a result, the RESET current is reduced by an order of magnitude. This interface engineering opens up a way in improving the resistive switching performances of CBRAM, and can be of great benefit to the potential applications of MoS 2 in next-generation data storage.
KW - conductive filaments
KW - conductive-bridging random access memory
KW - electrochemical reactions
KW - ion barriers
KW - molybdenum disulfide
UR - http://www.scopus.com/inward/record.url?scp=85061908877&partnerID=8YFLogxK
U2 - 10.1002/aelm.201800747
DO - 10.1002/aelm.201800747
M3 - Article
AN - SCOPUS:85061908877
SN - 2199-160X
VL - 5
SP - 1
EP - 7
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 4
M1 - 1800747
ER -