Interface engineered HfO2-based 3D vertical ReRAM

Boris Hudec, I. Ting Wang, Wei Li Lai, Che Chia Chang, Peter Jančovič, Karol Fröhlich, Matej Mičušík, Mária Omastová, Tuo-Hung Hou

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23 Scopus citations


We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO2/TiN memory cell. The HfO2 switching layer is grown by atomic layer deposition on the sidewall of a SiO2/TiN/SiO2/TiN/SiO2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 104 s and excellent switching stability at 400 K. Endurance of 107 write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance.

Original languageEnglish
Article number215102
Number of pages9
JournalJournal of Physics D: Applied Physics
Issue number21
StatePublished - 29 Apr 2016


  • HfO
  • ReRAM
  • TiON
  • V-RRAM
  • filament
  • ozone
  • resistive-switching


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