Interaction between chromium oxide and chromium silicide

A. Cros; R. A. Pollak; King-Ning Tu

doi:10.1063/1.331694

Interaction between chromium oxide and chromium silicide

A. Cros^*, R. A. Pollak, King-Ning Tu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr ₂O₃ and CrSi₂. We observed that upon annealing a Cr film on a Si substrate at 550°C to form CrSi₂, the native chromium surface oxide will decompose while a film of SiO₂ will form when the CrSi₂ growth front reaches the Cr₂O₃.

Original language	English
Pages (from-to)	258-259
Number of pages	2
Journal	Journal of Applied Physics
Volume	54
Issue number	1
DOIs	https://doi.org/10.1063/1.331694
State	Published - 1 Dec 1983

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@article{9e020d424fd24e31a17922767d2bdf64,

title = "Interaction between chromium oxide and chromium silicide",

abstract = "We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr 2O3 and CrSi2. We observed that upon annealing a Cr film on a Si substrate at 550°C to form CrSi2, the native chromium surface oxide will decompose while a film of SiO2 will form when the CrSi2 growth front reaches the Cr2O3.",

author = "A. Cros and Pollak, {R. A.} and King-Ning Tu",

year = "1983",

month = dec,

day = "1",

doi = "10.1063/1.331694",

language = "English",

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pages = "258--259",

journal = "Journal of Applied Physics",

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T1 - Interaction between chromium oxide and chromium silicide

AU - Cros, A.

AU - Pollak, R. A.

AU - Tu, King-Ning

PY - 1983/12/1

Y1 - 1983/12/1

N2 - We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr 2O3 and CrSi2. We observed that upon annealing a Cr film on a Si substrate at 550°C to form CrSi2, the native chromium surface oxide will decompose while a film of SiO2 will form when the CrSi2 growth front reaches the Cr2O3.

AB - We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr 2O3 and CrSi2. We observed that upon annealing a Cr film on a Si substrate at 550°C to form CrSi2, the native chromium surface oxide will decompose while a film of SiO2 will form when the CrSi2 growth front reaches the Cr2O3.

UR - http://www.scopus.com/inward/record.url?scp=0020497984&partnerID=8YFLogxK

U2 - 10.1063/1.331694

DO - 10.1063/1.331694

M3 - Article

AN - SCOPUS:0020497984

SN - 0021-8979

VL - 54

SP - 258

EP - 259

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Interaction between chromium oxide and chromium silicide

Abstract

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