Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation

Yu Che Chou; Chung Chun Hsu; Cheng Ting Chun; Chen Han Chou; Ming Li Tsai; Yi He Tsai; Wei Li Lee; Shin Yuan Wang; Guang Li Luo; Chao-Hsin Chien

doi:10.1109/NANO.2016.7751509

Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation

Yu Che Chou, Chung Chun Hsu, Cheng Ting Chun, Chen Han Chou, Ming Li Tsai, Yi He Tsai, Wei Li Lee, Shin Yuan Wang, Guang Li Luo, Chao-Hsin Chien^*

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this work, we investigated the influence of retrograde-well implantation on hetero-structure body-tied germanium (Ge) FinFET [1]. Using structural engineering, the retrograde well was fabricated prior to Ge epitaxy, which could avoid the activated temperature of dopant in Si substrate. With optimizing the implant condition, the p-Ge/n-Si hetero-structure junction exhibited high I_ON/I_OFF ratio and lower junction leakage (4 × 10^-3 μA/cm²). Furthermore, we also make a comparison of planar and mesa junction structures, mesa junction exhibited lower junction leakage (6× 10^-6 μA/cm²) as compared with the planar one mentioned before, which could be attributed to improvement in peripheral leakage due to dislocation within Ge and Si. Comparing the difference between retrograde-well and implant-free Ge FinFETs, the drain induced barrier lowering (DIBL) was considerably improved by 50 %. Our retrograde-well Ge FinFET exhibited a high I_ON/I_OFF ratio ∼ 8×10³ (I_S) than the conventional Ge FinFET (I_ON/I_OFF ∼2×10³).

Original language	English
Title of host publication	16th International Conference on Nanotechnology - IEEE NANO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	142-144
Number of pages	3
ISBN (Electronic)	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751509
State	Published - Aug 2016
Event	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: 22 Aug 2016 → 25 Aug 2016

Publication series

Name	16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country/Territory	Japan
City	Sendai
Period	22/08/16 → 25/08/16

Keywords

Body-tied Ge FinFET
DIBL (drain-induced barrier lowering)
Implantation
Retrograde-well

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10.1109/NANO.2016.7751509

Cite this

Chou, Y. C., Hsu, C. C., Chun, C. T., Chou, C. H., Tsai, M. L., Tsai, Y. H., Lee, W. L., Wang, S. Y., Luo, G. L., & Chien, C-H. (2016). Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 142-144). [7751509] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751509

@inproceedings{6cda7cf3789543ffbb81c609b0288514,

title = "Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation",

abstract = "In this work, we investigated the influence of retrograde-well implantation on hetero-structure body-tied germanium (Ge) FinFET [1]. Using structural engineering, the retrograde well was fabricated prior to Ge epitaxy, which could avoid the activated temperature of dopant in Si substrate. With optimizing the implant condition, the p-Ge/n-Si hetero-structure junction exhibited high ION/IOFF ratio and lower junction leakage (4 × 10-3 μA/cm2). Furthermore, we also make a comparison of planar and mesa junction structures, mesa junction exhibited lower junction leakage (6× 10-6 μA/cm2) as compared with the planar one mentioned before, which could be attributed to improvement in peripheral leakage due to dislocation within Ge and Si. Comparing the difference between retrograde-well and implant-free Ge FinFETs, the drain induced barrier lowering (DIBL) was considerably improved by 50 %. Our retrograde-well Ge FinFET exhibited a high ION/IOFF ratio ∼ 8×103 (IS) than the conventional Ge FinFET (ION/IOFF ∼2×103).",

keywords = "Body-tied Ge FinFET, DIBL (drain-induced barrier lowering), Implantation, Retrograde-well",

author = "Chou, {Yu Che} and Hsu, {Chung Chun} and Chun, {Cheng Ting} and Chou, {Chen Han} and Tsai, {Ming Li} and Tsai, {Yi He} and Lee, {Wei Li} and Wang, {Shin Yuan} and Luo, {Guang Li} and Chao-Hsin Chien",

year = "2016",

month = aug,

doi = "10.1109/NANO.2016.7751509",

language = "English",

series = "16th International Conference on Nanotechnology - IEEE NANO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "142--144",

booktitle = "16th International Conference on Nanotechnology - IEEE NANO 2016",

address = "United States",

note = "null ; Conference date: 22-08-2016 Through 25-08-2016",

}

Chou, YC, Hsu, CC, Chun, CT, Chou, CH, Tsai, ML, Tsai, YH, Lee, WL, Wang, SY, Luo, GL & Chien, C-H 2016, Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751509, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 142-144, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 22/08/16. https://doi.org/10.1109/NANO.2016.7751509

Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation. / Chou, Yu Che; Hsu, Chung Chun; Chun, Cheng Ting et al.

16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 142-144 7751509 (16th International Conference on Nanotechnology - IEEE NANO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation

AU - Chou, Yu Che

AU - Hsu, Chung Chun

AU - Chun, Cheng Ting

AU - Chou, Chen Han

AU - Tsai, Ming Li

AU - Tsai, Yi He

AU - Lee, Wei Li

AU - Wang, Shin Yuan

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

PY - 2016/8

Y1 - 2016/8

N2 - In this work, we investigated the influence of retrograde-well implantation on hetero-structure body-tied germanium (Ge) FinFET [1]. Using structural engineering, the retrograde well was fabricated prior to Ge epitaxy, which could avoid the activated temperature of dopant in Si substrate. With optimizing the implant condition, the p-Ge/n-Si hetero-structure junction exhibited high ION/IOFF ratio and lower junction leakage (4 × 10-3 μA/cm2). Furthermore, we also make a comparison of planar and mesa junction structures, mesa junction exhibited lower junction leakage (6× 10-6 μA/cm2) as compared with the planar one mentioned before, which could be attributed to improvement in peripheral leakage due to dislocation within Ge and Si. Comparing the difference between retrograde-well and implant-free Ge FinFETs, the drain induced barrier lowering (DIBL) was considerably improved by 50 %. Our retrograde-well Ge FinFET exhibited a high ION/IOFF ratio ∼ 8×103 (IS) than the conventional Ge FinFET (ION/IOFF ∼2×103).

AB - In this work, we investigated the influence of retrograde-well implantation on hetero-structure body-tied germanium (Ge) FinFET [1]. Using structural engineering, the retrograde well was fabricated prior to Ge epitaxy, which could avoid the activated temperature of dopant in Si substrate. With optimizing the implant condition, the p-Ge/n-Si hetero-structure junction exhibited high ION/IOFF ratio and lower junction leakage (4 × 10-3 μA/cm2). Furthermore, we also make a comparison of planar and mesa junction structures, mesa junction exhibited lower junction leakage (6× 10-6 μA/cm2) as compared with the planar one mentioned before, which could be attributed to improvement in peripheral leakage due to dislocation within Ge and Si. Comparing the difference between retrograde-well and implant-free Ge FinFETs, the drain induced barrier lowering (DIBL) was considerably improved by 50 %. Our retrograde-well Ge FinFET exhibited a high ION/IOFF ratio ∼ 8×103 (IS) than the conventional Ge FinFET (ION/IOFF ∼2×103).

KW - Body-tied Ge FinFET

KW - DIBL (drain-induced barrier lowering)

KW - Implantation

KW - Retrograde-well

UR - http://www.scopus.com/inward/record.url?scp=85006856731&partnerID=8YFLogxK

U2 - 10.1109/NANO.2016.7751509

DO - 10.1109/NANO.2016.7751509

M3 - Conference contribution

AN - SCOPUS:85006856731

T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016

SP - 142

EP - 144

BT - 16th International Conference on Nanotechnology - IEEE NANO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 22 August 2016 through 25 August 2016

ER -

Chou YC, Hsu CC, Chun CT, Chou CH, Tsai ML, Tsai YH et al. Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 142-144. 7751509. (16th International Conference on Nanotechnology - IEEE NANO 2016). doi: 10.1109/NANO.2016.7751509

Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation

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