Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

Humaira Taz, Bhagwati Prasad*, Yen-Lin Huang, Zuhuang Chen, Shang Lin Hsu, Ruijuan Xu, Vishal Thakare, Tamil Selvan Sakthivel, Chenze Liu, Mark Hettick, Rupam Mukherjee, Sudipta Seal, Lane W. Martin, Ali Javey, Gerd Duscher, Ramamoorthy Ramesh, Ramki Kalyanaraman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after ~1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.

Original languageEnglish
Article number3583
Pages (from-to)1-10
Number of pages10
JournalScientific reports
Volume10
Issue number1
DOIs
StatePublished - 1 Dec 2020

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