Abstract
In this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k ∼ 7), the HSQ passivation layer (k ∼ 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs).
Original language | English |
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Pages (from-to) | 70-74 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 498 |
Issue number | 1-2 |
DOIs | |
State | Published - 1 Mar 2006 |
Event | Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - Duration: 12 Nov 2004 → 14 Nov 2004 |
Keywords
- Low-k
- Passivation
- TFT