Abstract
We present a detailed investigation of two forms of negative gate bias stress in four parallel GaN HEMTs in cascode configuration in this article: (i) pulsed off-state gate bias and (ii) negative bias temperature instability (NBTI). Device statical parameter degradations and instabilities, such as IDS, RDS-ON, GM, max, and IGSS, are evident under low/mid pulsed off-state gate bias stress conditions, according to the measured results of pulsed gate bias stress. Under NBTI experiments, mid/high off-state bias stress with accelerated temperatures, the device demonstrated their excellent stability and negligible degradation of VTHand RDS-ON. These findings pave the way for evaluating device reliability and understanding the failure mechanism caused by negative gate bias stress, allowing emerging GaN cascode technologies to advance faster.
Original language | English |
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Pages (from-to) | 282-286 |
Number of pages | 5 |
Journal | IFAC-PapersOnLine |
Volume | 55 |
Issue number | 27 |
DOIs | |
State | Published - 1 Sep 2022 |
Event | 9th IFAC Symposium on Mechatronic Systems, MECHATRONICS 2022 - Los Angeles, United States Duration: 6 Sep 2022 → 9 Sep 2022 |
Keywords
- Cascode Power Module
- GaN HEMT
- Gate Bias Stress
- Rinstability
- V