Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation Process

K. T. Chan; Albert Chin; Ying-Dar Lin; Chi-Yang Chang; C. X. Zhu; M. F. Li; D. L. Kwong; S. McAlister; D. S. Duh; W. J. Lin

doi:10.1109/LMWC.2003.817146

Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation Process

K. T. Chan^*, Albert Chin, Ying-Dar Lin, Chi-Yang Chang, C. X. Zhu, M. F. Li, D. L. Kwong, S. McAlister, D. S. Duh, W. J. Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of ∼ 4 MeV with a depth of ∼ 175 μm. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved.

Original language	American English
Pages (from-to)	487-489
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	13
Issue number	11
DOIs	https://doi.org/10.1109/LMWC.2003.817146
State	Published - 1 Nov 2003

Keywords

Antenna
Implantation
Loss
RF
Transmission line

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title = "Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation Process",

abstract = "We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of ∼ 4 MeV with a depth of ∼ 175 μm. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved.",

keywords = "Antenna, Implantation, Loss, RF, Transmission line",

author = "Chan, {K. T.} and Albert Chin and Ying-Dar Lin and Chi-Yang Chang and Zhu, {C. X.} and Li, {M. F.} and Kwong, {D. L.} and S. McAlister and Duh, {D. S.} and Lin, {W. J.}",

year = "2003",

month = nov,

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doi = "10.1109/LMWC.2003.817146",

language = "American English",

volume = "13",

pages = "487--489",

journal = "IEEE Microwave and Wireless Components Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation Process

AU - Chan, K. T.

AU - Chin, Albert

AU - Lin, Ying-Dar

AU - Chang, Chi-Yang

AU - Zhu, C. X.

AU - Li, M. F.

AU - Kwong, D. L.

AU - McAlister, S.

AU - Duh, D. S.

AU - Lin, W. J.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of ∼ 4 MeV with a depth of ∼ 175 μm. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved.

AB - We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of ∼ 4 MeV with a depth of ∼ 175 μm. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved.

KW - Antenna

KW - Implantation

KW - Loss

KW - RF

KW - Transmission line

UR - http://www.scopus.com/inward/record.url?scp=0242406122&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2003.817146

DO - 10.1109/LMWC.2003.817146

M3 - Article

AN - SCOPUS:0242406122

SN - 1531-1309

VL - 13

SP - 487

EP - 489

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 11

ER -

Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation Process

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Keywords

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