@inproceedings{95f29d81af83485896ad290a40663928,
title = "Integrable Germanium Few-Hole Double Quantum-Dots and Single-Hole Transistors using CMOS Fabrication Apporaches",
abstract = "We report Ge few-hole double quantum-dots (DQDs) integrable with single-hole transistors (SHTs) for high-sensitivity charge detection. Ge DQDs with 20 nm diameter are closely coupled via a 10 nm-thick Si barrier, inducing strong inter-QD coupling. Thanks to strong quantum confinement induced by self-organized, hard-wall barriers of Si3N4/SiO2 , Ge SHT exhibits aperiodic oscillatory current behaviors with high peak to valley current ratio (<200) , low leakage (\textasciitilde{}40 fA) , and large addition energy (<15 meV) , offering great promises for high-fidelity charge sensing.",
keywords = "Ge, SHT, double quantum dot, few-hole",
author = "Lai, \{Chi Cheng\} and Wang, \{I. Hsiang\} and Ting Tsai and Lin, \{Horng Chih\} and Li, \{Pei Wen\}",
note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 26th Silicon Nanoelectronics Workshop, SNW 2023 ; Conference date: 11-06-2023 Through 12-06-2023",
year = "2023",
doi = "10.23919/SNW57900.2023.10183955",
language = "English",
series = "2023 Silicon Nanoelectronics Workshop, SNW 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "95--96",
booktitle = "2023 Silicon Nanoelectronics Workshop, SNW 2023",
address = "美國",
}