Integrable Germanium Few-Hole Double Quantum-Dots and Single-Hole Transistors using CMOS Fabrication Apporaches

Chi Cheng Lai, I. Hsiang Wang, Ting Tsai, Horng Chih Lin, Pei Wen Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report Ge few-hole double quantum-dots (DQDs) integrable with single-hole transistors (SHTs) for high-sensitivity charge detection. Ge DQDs with 20 nm diameter are closely coupled via a 10 nm-thick Si barrier, inducing strong inter-QD coupling. Thanks to strong quantum confinement induced by self-organized, hard-wall barriers of Si3N4/SiO2 , Ge SHT exhibits aperiodic oscillatory current behaviors with high peak to valley current ratio (<200) , low leakage (~40 fA) , and large addition energy (<15 meV) , offering great promises for high-fidelity charge sensing.

Original languageEnglish
Title of host publication2023 Silicon Nanoelectronics Workshop, SNW 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages95-96
Number of pages2
ISBN (Electronic)9784863488083
DOIs
StatePublished - 2023
Event26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan
Duration: 11 Jun 202312 Jun 2023

Publication series

Name2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference26th Silicon Nanoelectronics Workshop, SNW 2023
Country/TerritoryJapan
CityKyoto
Period11/06/2312/06/23

Keywords

  • double quantum dot
  • few-hole
  • Ge
  • SHT

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