In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

L. W. Wu, S. J. Chang*, Y. K. Su, R. W. Chuang, Y. P. Hsu, Cheng-Huang Kuo, W. C. Lai, T. C. Wen, J. M. Tsai, J. K. Sheu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

61 Scopus citations


Mg-doped p-GaN epitaxial layers prepared at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In0.23Ga0.77N/GaN multiquantum well (MQW) light emitting diodes (LEDs) with such a low 800 °C-grown p-GaN cap layer were also fabricated. It was found that we could enhance the LED output intensity by more than 90% with the low 800 °C-grown p-GaN cap layer, as compared to the conventional high 1000 °C-grown p-GaN cap layer.

Original languageEnglish
Pages (from-to)2027-2030
Number of pages4
JournalSolid-State Electronics
Issue number11
StatePublished - 1 Nov 2003


  • Growth temperature
  • InGaN/GaN
  • LED
  • MQW
  • Roughness


Dive into the research topics of 'In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer'. Together they form a unique fingerprint.

Cite this