The mismatch mechanism in a current mirror consisting of laterally diffused p-channel MOS (LDPMOS) technology was investigated using a scanning electron microscope (SEM) with in situ nanoprobing. The electrical measurement found a saturation current mismatch of 52 μA between the LDPMOS transistors. Furthermore, the proposed inspection identified successfully 0.4-μm p-well layer misalignment, which was the root cause of the mismatch. This letter demonstrates that an in situ nanoprobing system is a powerful tool for enhancing p-well dopant contrast in a SEM, analyzing site-specific failures, and studying device physics under a dynamic scope.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - 1 Oct 2011|
- Current mirror
- laterally diffused p-channel metal-oxide-semiconductor (LDPMOS)
- secondary electron potential contrast (SEPC)