@inproceedings{8e4e3b596ab64659a1cff0c993fc8427,
title = "InN nanopillar devices with strong photoresponse",
abstract = "The InN pillars/p-GaN is promising for extended visible and infrared absorption. The higher growth temperature and more V/III could trend toward hexagonal InN pillars epitaxy, fabricated by a low-pressure metal organic chemical vapor deposition. The tensile strain effect and the peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated via Raman and photoluminescence (PL) measurements. The high quality InN pillars reveal no indium droplets by X-ray diffraction pattern. A InN pillars photodetection device is demonstrated with extended IR response, and the portion photocurrent of InN detection as high as 13\% measured via AM1.5G solar simulated spectra.",
keywords = "Indium compounds, Infrared, nanostructured materials, photodetection devices",
author = "Hsu, \{Lung Hsing\} and Kuo, \{Chien Ting\} and Cheng, \{Yuh Jen\} and Chen, \{Kuan Chao\} and Hao-Chung Kuo and Lin, \{Shih Yen\} and Chien-Chung Lin",
year = "2016",
month = nov,
day = "18",
doi = "10.1109/PVSC.2016.7750160",
language = "English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2790--2793",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
address = "美國",
note = "43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",
}