InGaZnO Ferroelectric Thin-Film Transistor Using HfO/AlO/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

Min Lu Kao, Yan Kui Liang, Yuan Lin, You Chen Weng, Chang Fu Dee, Po Tsun Liu, Ching Ting Lee, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The metal-insulator-semiconductor (MIS) capacitors and InGaZnO4 (IGZO) channel thin-film transistors (TFTs) with the HfO2/Al2O3/AlN hybrid gate stack are demonstrated in this letter. With the hybrid gate stack, the TFT exhibits the clear counter-clockwise memory windows (MWs) of 6.5 V, 6.2 V and 28.7 V respectively measured at 368 K, RT, and 80 K under the sweep voltage of ±40 V. Moreover, the retention over 104 s and the endurance over 104 cycles are demonstrated under the program (P)/erase (E) pulsed height of ±45 V. The results exhibit the applicable possibility of the HfO2/Al2O3/AlN stack for the high voltage memory device applications.

Original languageEnglish
Pages (from-to)2105-2108
Number of pages4
JournalIeee Electron Device Letters
Volume43
Issue number12
DOIs
StatePublished - 1 Dec 2022

Keywords

  • AlN
  • Epitaxy
  • IGZO TFTs
  • MOCVD

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