InGaZnO Ferroelectric Thin-Film Transistor Using HfO/AlO/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

Min Lu Kao; Yan Kui Liang; Yuan Lin; You Chen Weng; Chang Fu Dee; Po Tsun Liu; Ching Ting Lee; Edward Yi Chang

doi:10.1109/LED.2022.3216620

InGaZnO Ferroelectric Thin-Film Transistor Using HfO/AlO/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

Min Lu Kao, Yan Kui Liang, Yuan Lin, You Chen Weng, Chang Fu Dee, Po Tsun Liu, Ching Ting Lee, Edward Yi Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The metal-insulator-semiconductor (MIS) capacitors and InGaZnO4 (IGZO) channel thin-film transistors (TFTs) with the HfO2/Al2O3/AlN hybrid gate stack are demonstrated in this letter. With the hybrid gate stack, the TFT exhibits the clear counter-clockwise memory windows (MWs) of 6.5 V, 6.2 V and 28.7 V respectively measured at 368 K, RT, and 80 K under the sweep voltage of ±40 V. Moreover, the retention over 104 s and the endurance over 104 cycles are demonstrated under the program (P)/erase (E) pulsed height of ±45 V. The results exhibit the applicable possibility of the HfO2/Al2O3/AlN stack for the high voltage memory device applications.

Original language	English
Pages (from-to)	2105-2108
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	43
Issue number	12
DOIs	https://doi.org/10.1109/LED.2022.3216620
State	Published - 1 Dec 2022

Keywords

AlN
Epitaxy
IGZO TFTs
MOCVD

Access to Document

10.1109/LED.2022.3216620

Cite this

@article{31b929b4ca294d8e8de4e15f122bbc4d,

title = "InGaZnO Ferroelectric Thin-Film Transistor Using HfO/AlO/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window",

abstract = "In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The metal-insulator-semiconductor (MIS) capacitors and InGaZnO4 (IGZO) channel thin-film transistors (TFTs) with the HfO2/Al2O3/AlN hybrid gate stack are demonstrated in this letter. With the hybrid gate stack, the TFT exhibits the clear counter-clockwise memory windows (MWs) of 6.5 V, 6.2 V and 28.7 V respectively measured at 368 K, RT, and 80 K under the sweep voltage of ±40 V. Moreover, the retention over 104 s and the endurance over 104 cycles are demonstrated under the program (P)/erase (E) pulsed height of ±45 V. The results exhibit the applicable possibility of the HfO2/Al2O3/AlN stack for the high voltage memory device applications.",

keywords = "AlN, Epitaxy, IGZO TFTs, MOCVD",

author = "Kao, {Min Lu} and Liang, {Yan Kui} and Yuan Lin and Weng, {You Chen} and Dee, {Chang Fu} and Liu, {Po Tsun} and Lee, {Ching Ting} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",

year = "2022",

month = dec,

day = "1",

doi = "10.1109/LED.2022.3216620",

language = "English",

volume = "43",

pages = "2105--2108",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - InGaZnO Ferroelectric Thin-Film Transistor Using HfO/AlO/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

AU - Kao, Min Lu

AU - Liang, Yan Kui

AU - Lin, Yuan

AU - Weng, You Chen

AU - Dee, Chang Fu

AU - Liu, Po Tsun

AU - Lee, Ching Ting

AU - Chang, Edward Yi

PY - 2022/12/1

Y1 - 2022/12/1

N2 - In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The metal-insulator-semiconductor (MIS) capacitors and InGaZnO4 (IGZO) channel thin-film transistors (TFTs) with the HfO2/Al2O3/AlN hybrid gate stack are demonstrated in this letter. With the hybrid gate stack, the TFT exhibits the clear counter-clockwise memory windows (MWs) of 6.5 V, 6.2 V and 28.7 V respectively measured at 368 K, RT, and 80 K under the sweep voltage of ±40 V. Moreover, the retention over 104 s and the endurance over 104 cycles are demonstrated under the program (P)/erase (E) pulsed height of ±45 V. The results exhibit the applicable possibility of the HfO2/Al2O3/AlN stack for the high voltage memory device applications.

AB - In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The metal-insulator-semiconductor (MIS) capacitors and InGaZnO4 (IGZO) channel thin-film transistors (TFTs) with the HfO2/Al2O3/AlN hybrid gate stack are demonstrated in this letter. With the hybrid gate stack, the TFT exhibits the clear counter-clockwise memory windows (MWs) of 6.5 V, 6.2 V and 28.7 V respectively measured at 368 K, RT, and 80 K under the sweep voltage of ±40 V. Moreover, the retention over 104 s and the endurance over 104 cycles are demonstrated under the program (P)/erase (E) pulsed height of ±45 V. The results exhibit the applicable possibility of the HfO2/Al2O3/AlN stack for the high voltage memory device applications.

KW - AlN

KW - Epitaxy

KW - IGZO TFTs

KW - MOCVD

UR - http://www.scopus.com/inward/record.url?scp=85141531392&partnerID=8YFLogxK

U2 - 10.1109/LED.2022.3216620

DO - 10.1109/LED.2022.3216620

M3 - Article

AN - SCOPUS:85141531392

SN - 0741-3106

VL - 43

SP - 2105

EP - 2108

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

InGaZnO Ferroelectric Thin-Film Transistor Using HfO/AlO/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this