InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

T. C. Wen*, S. J. Chang, Y. K. Su, L. W. Wu, Cheng-Huang Kuo, W. C. Lai, J. K. Sheu, T. Y. Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.

Original languageEnglish
Pages (from-to)419-422
Number of pages4
JournalJournal of Electronic Materials
Issue number5
StatePublished - 1 Jan 2003


  • Green light-emitting diode (LED)
  • InGaN/GaN
  • Multiple-quantum well (MQW)
  • PL
  • Reliability


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