InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

C. H. Liu; R. W. Chuang; S. J. Chang; Y. K. Su; Cheng-Huang Kuo; J. M. Tsai; C. C. Lin

doi:10.1016/j.mseb.2004.04.015

InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

C. H. Liu, R. W. Chuang, S. J. Chang^*, Y. K. Su, Cheng-Huang Kuo, J. M. Tsai, C. C. Lin

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

Original language	English
Pages (from-to)	214-217
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	111
Issue number	2-3
DOIs	https://doi.org/10.1016/j.mseb.2004.04.015
State	Published - 25 Aug 2004

Keywords

AFM
Buffer
LED
Life time
SiN
TEM

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10.1016/j.mseb.2004.04.015

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@article{d7e2c1baf4174dd4ab23cdc1d7e188eb,

title = "InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers",

abstract = "Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.",

keywords = "AFM, Buffer, LED, Life time, SiN, TEM",

author = "Liu, {C. H.} and Chuang, {R. W.} and Chang, {S. J.} and Su, {Y. K.} and Cheng-Huang Kuo and Tsai, {J. M.} and Lin, {C. C.}",

year = "2004",

month = aug,

day = "25",

doi = "10.1016/j.mseb.2004.04.015",

language = "English",

volume = "111",

pages = "214--217",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier Ltd",

number = "2-3",

}

TY - JOUR

T1 - InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

AU - Liu, C. H.

AU - Chuang, R. W.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Kuo, Cheng-Huang

AU - Tsai, J. M.

AU - Lin, C. C.

PY - 2004/8/25

Y1 - 2004/8/25

N2 - Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

AB - Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

KW - AFM

KW - Buffer

KW - LED

KW - Life time

KW - SiN

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=3242677238&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2004.04.015

DO - 10.1016/j.mseb.2004.04.015

M3 - Article

AN - SCOPUS:3242677238

SN - 0921-5107

VL - 111

SP - 214

EP - 217

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 2-3

ER -

InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

Abstract

Keywords

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