InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

L. W. Wu; S. J. Chang; Y. K. Su; T. Y. Tsai; T. C. Wen; Cheng-Huang Kuo; W. C. Lai; J. K. Sheu; J. M. Tsai; S. C. Chen; B. R. Huang

doi:10.1007/s11664-003-0168-1

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

L. W. Wu^*, S. J. Chang, Y. K. Su, T. Y. Tsai, T. C. Wen, Cheng-Huang Kuo, W. C. Lai, J. K. Sheu, J. M. Tsai, S. C. Chen, B. R. Huang

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

Nitride-based light-emitting diodes (LEDs) with Si-doped n^--In_0.23Ga_0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 × 10^-2 Ω-cm² for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 × 10⁰ Ω-cm² for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP₂Mg flow rate when we grow the underneath p-type GaN layer. The LED-output intensity was also found to be larger for samples with the SPS structure.

Original language	English
Pages (from-to)	411-414
Number of pages	4
Journal	Journal of Electronic Materials
Volume	32
Issue number	5
DOIs	https://doi.org/10.1007/s11664-003-0168-1
State	Published - May 2003

Keywords

InGaN/GaN
Light-emitting diode (LED)
Multiple-quantum well (MQW)
Short-period superlattice (SPS)

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10.1007/s11664-003-0168-1

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@article{2d612bfb09654bb884bce8723e38704b,

title = "InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer",

abstract = "Nitride-based light-emitting diodes (LEDs) with Si-doped n--In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 × 10-2 Ω-cm2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 × 100 Ω-cm2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP2Mg flow rate when we grow the underneath p-type GaN layer. The LED-output intensity was also found to be larger for samples with the SPS structure.",

keywords = "InGaN/GaN, Light-emitting diode (LED), Multiple-quantum well (MQW), Short-period superlattice (SPS)",

author = "Wu, {L. W.} and Chang, {S. J.} and Su, {Y. K.} and Tsai, {T. Y.} and Wen, {T. C.} and Cheng-Huang Kuo and Lai, {W. C.} and Sheu, {J. K.} and Tsai, {J. M.} and Chen, {S. C.} and Huang, {B. R.}",

year = "2003",

month = may,

doi = "10.1007/s11664-003-0168-1",

language = "English",

volume = "32",

pages = "411--414",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

AU - Wu, L. W.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Tsai, T. Y.

AU - Wen, T. C.

AU - Kuo, Cheng-Huang

AU - Lai, W. C.

AU - Sheu, J. K.

AU - Tsai, J. M.

AU - Chen, S. C.

AU - Huang, B. R.

PY - 2003/5

Y1 - 2003/5

N2 - Nitride-based light-emitting diodes (LEDs) with Si-doped n--In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 × 10-2 Ω-cm2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 × 100 Ω-cm2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP2Mg flow rate when we grow the underneath p-type GaN layer. The LED-output intensity was also found to be larger for samples with the SPS structure.

AB - Nitride-based light-emitting diodes (LEDs) with Si-doped n--In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 × 10-2 Ω-cm2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 × 100 Ω-cm2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP2Mg flow rate when we grow the underneath p-type GaN layer. The LED-output intensity was also found to be larger for samples with the SPS structure.

KW - InGaN/GaN

KW - Light-emitting diode (LED)

KW - Multiple-quantum well (MQW)

KW - Short-period superlattice (SPS)

UR - http://www.scopus.com/inward/record.url?scp=0038664231&partnerID=8YFLogxK

U2 - 10.1007/s11664-003-0168-1

DO - 10.1007/s11664-003-0168-1

M3 - Article

AN - SCOPUS:0038664231

SN - 0361-5235

VL - 32

SP - 411

EP - 414

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

Abstract

Keywords

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