Keyphrases
Molecular Beam Epitaxy
100%
Indium Gallium Nitride (InGaN)
100%
GaN-based Light-emitting Diodes
100%
Double Heterostructure
50%
Multiple Quantum Well Structure
50%
Cm(III)
33%
Multiple Quantum Wells
33%
White Emission
33%
Homojunction
33%
Dopant
16%
N-GaN
16%
P-GaN
16%
Active Layer
16%
Light-emitting Diodes
16%
InGaN Quantum Wells
16%
Nitrogen Source
16%
Injection Current
16%
Phase Separation
16%
Active Regions
16%
Deep-blue Electroluminescence
16%
Solid Source
16%
Homojunction Structure
16%
Engineering
Quantum Well
100%
Light-Emitting Diode
100%
Heterostructures
50%
Homojunction
50%
Dopants
16%
Current Injection
16%
Active Layer
16%
Active Region
16%
Phase Separation
16%
Luminaires
16%
Material Science
Light-Emitting Diode
100%
Quantum Well
100%
Molecular Beam Epitaxy
100%
Heterojunction
50%
Doping (Additives)
16%
Electroluminescence
16%
Physics
Light Emitting Diode
100%
Multiple Quantum Well
100%
Molecular Beam Epitaxy
100%
Quantum Wells
20%
Nitrogen Plasma
20%
Electroluminescence
20%