InGaN-based light-emitting diode with undercut side wall

Chih Chiang Kao*, J. T. Chu, H. W. Huang, Y. C. Peng, C. C. Yu, Y. L. Hseih, C. F. Lin, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Indium gallium nitride (InGaN)-based light emitted diodes (LED) with ∼ 22° undercut side walls were fabricated by controllable inductively coupled plasma reactive ion-etching (ICP-RIE). The structure of the LEDs consisted 30-nm-thick low temperature GaN nucleation layer, and an undoped 5 period InGaN-GaN multiple quantum well (MQW) active region with emission at ∼470 nm at 20 mA operation. Current-voltage characteristics of these diodes were also measured. It was observed that with a 20-mA current injection, the output powers of the LED with ∼ 22° undercut side walls and normal LEd were about 5 and 3 mW respectively.

Original languageEnglish
Pages (from-to)286-287
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - 2004
Event2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico
Duration: 7 Nov 200411 Nov 2004


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