InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers

A. Li; S. C. Liu; Kuan-Wei Su; Y. L. Liao; S. C. Huang; Yung-Fu Chen; Kai-Feng Huang

doi:10.1007/s00340-006-2247-5

InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers

A. Li, S. C. Liu, Kuan-Wei Su, Y. L. Liao, S. C. Huang, Yung-Fu Chen^*, Kai-Feng Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06μm. With an incident pump power of 1.8W, an average output power of 160mW with a Q-switched pulse width of 19ns at a pulse repetition rate of 38kHz was obtained.

Original language	English
Pages (from-to)	429-431
Number of pages	3
Journal	Applied Physics B: Lasers and Optics
Volume	84
Issue number	3
DOIs	https://doi.org/10.1007/s00340-006-2247-5
State	Published - 1 Sep 2006

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title = "InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers",

abstract = "We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06μm. With an incident pump power of 1.8W, an average output power of 160mW with a Q-switched pulse width of 19ns at a pulse repetition rate of 38kHz was obtained.",

author = "A. Li and Liu, {S. C.} and Kuan-Wei Su and Liao, {Y. L.} and Huang, {S. C.} and Yung-Fu Chen and Kai-Feng Huang",

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T1 - InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers

AU - Li, A.

AU - Liu, S. C.

AU - Su, Kuan-Wei

AU - Liao, Y. L.

AU - Huang, S. C.

AU - Chen, Yung-Fu

AU - Huang, Kai-Feng

PY - 2006/9/1

Y1 - 2006/9/1

N2 - We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06μm. With an incident pump power of 1.8W, an average output power of 160mW with a Q-switched pulse width of 19ns at a pulse repetition rate of 38kHz was obtained.

AB - We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06μm. With an incident pump power of 1.8W, an average output power of 160mW with a Q-switched pulse width of 19ns at a pulse repetition rate of 38kHz was obtained.

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U2 - 10.1007/s00340-006-2247-5

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SN - 0946-2171

VL - 84

SP - 429

EP - 431

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

IS - 3

ER -

InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers

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