InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications

Hung Pin D. Yang; Zao En Yeh; Kuo-Jui Lin; Hao-Chung Kuo; Jim Y. Chi

doi:10.1016/j.microrel.2010.01.044

InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications

Hung Pin D. Yang^*, Zao En Yeh, Kuo-Jui Lin, Hao-Chung Kuo, Jim Y. Chi

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

An InGaAs submonolayer (SML) quantum-dot photonic-crystal light-emitting diode (QD PhC-LED) with for fiber-optic applications is reported. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 0.34 mW at 20 mA has been obtained in the 980 nm range.

Original language	English
Pages (from-to)	688-691
Number of pages	4
Journal	Microelectronics Reliability
Volume	50
Issue number	5
DOIs	https://doi.org/10.1016/j.microrel.2010.01.044
State	Published - May 2010

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title = "InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications",

abstract = "An InGaAs submonolayer (SML) quantum-dot photonic-crystal light-emitting diode (QD PhC-LED) with for fiber-optic applications is reported. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 0.34 mW at 20 mA has been obtained in the 980 nm range.",

author = "Yang, {Hung Pin D.} and Yeh, {Zao En} and Kuo-Jui Lin and Hao-Chung Kuo and Chi, {Jim Y.}",

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T1 - InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications

AU - Yang, Hung Pin D.

AU - Yeh, Zao En

AU - Lin, Kuo-Jui

AU - Kuo, Hao-Chung

AU - Chi, Jim Y.

PY - 2010/5

Y1 - 2010/5

N2 - An InGaAs submonolayer (SML) quantum-dot photonic-crystal light-emitting diode (QD PhC-LED) with for fiber-optic applications is reported. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 0.34 mW at 20 mA has been obtained in the 980 nm range.

AB - An InGaAs submonolayer (SML) quantum-dot photonic-crystal light-emitting diode (QD PhC-LED) with for fiber-optic applications is reported. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 0.34 mW at 20 mA has been obtained in the 980 nm range.

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U2 - 10.1016/j.microrel.2010.01.044

DO - 10.1016/j.microrel.2010.01.044

M3 - Article

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SN - 0026-2714

VL - 50

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EP - 691

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 5

ER -

InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications

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