InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm

J. Y. Huang; H. C. Liang; Kuan-Wei Su; H. C. Lai; Yung-Fu Chen; Kai-Feng Huang

doi:10.1364/AO.46.000239

InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm

J. Y. Huang, H. C. Liang, Kuan-Wei Su, H. C. Lai, Yung-Fu Chen^*, Kai-Feng Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.

Original language	English
Pages (from-to)	239-242
Number of pages	4
Journal	Applied Optics
Volume	46
Issue number	2
DOIs	https://doi.org/10.1364/AO.46.000239
State	Published - 10 Jan 2007

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abstract = "A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.",

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AU - Chen, Yung-Fu

AU - Huang, Kai-Feng

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AB - A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.

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InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm

Abstract

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