InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

Shin Yuan Wang; Chao-Hsin Chien; Jin Ju Lin; Chun Yen Chang

doi:10.1109/IPFA.2015.7224414

InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

Shin Yuan Wang, Chao-Hsin Chien, Jin Ju Lin, Chun Yen Chang

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3 as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (Rsd) that is lower than that in P-N junction devices due to the low Schottky barrier height and the peak mobility was about 1138 cm ² /V-s and the interface state density (Dit) was about 10 ¹² cm ^-2 eV ^-1 at Et = Ev + 0.6 eV by using full-conductance method.

Original language	English
Title of host publication	Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	415-418
Number of pages	4
ISBN (Electronic)	9781479999286, 9781479999286
DOIs	https://doi.org/10.1109/IPFA.2015.7224414
State	Published - 25 Aug 2015
Event	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan Duration: 29 Jun 2015 → 2 Jul 2015

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2015-August

Conference

Conference	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Country/Territory	Taiwan
City	Hsinchu
Period	29/06/15 → 2/07/15

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10.1109/IPFA.2015.7224414

Cite this

Wang, S. Y., Chien, C-H., Lin, J. J., & Chang, C. Y. (2015). InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (pp. 415-418). [7224414] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224414

Wang, Shin Yuan ; Chien, Chao-Hsin ; Lin, Jin Ju et al. / InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain. Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 415-418 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{e05d89bc531a43e08873d1ddb12fbccf,

title = "InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain",

abstract = " N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3 as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (Rsd) that is lower than that in P-N junction devices due to the low Schottky barrier height and the peak mobility was about 1138 cm 2 /V-s and the interface state density (Dit) was about 10 12 cm -2 eV -1 at Et = Ev + 0.6 eV by using full-conductance method. ",

author = "Wang, {Shin Yuan} and Chao-Hsin Chien and Lin, {Jin Ju} and Chang, {Chun Yen}",

year = "2015",

month = aug,

day = "25",

doi = "10.1109/IPFA.2015.7224414",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "415--418",

booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",

address = "United States",

note = "null ; Conference date: 29-06-2015 Through 02-07-2015",

}

Wang, SY, Chien, C-H, Lin, JJ & Chang, CY 2015, InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain. in Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015., 7224414, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 415-418, 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015, Hsinchu, Taiwan, 29/06/15. https://doi.org/10.1109/IPFA.2015.7224414

InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain. / Wang, Shin Yuan; Chien, Chao-Hsin; Lin, Jin Ju et al.

Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 415-418 7224414 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

AU - Wang, Shin Yuan

AU - Chien, Chao-Hsin

AU - Lin, Jin Ju

AU - Chang, Chun Yen

PY - 2015/8/25

Y1 - 2015/8/25

N2 - N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3 as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (Rsd) that is lower than that in P-N junction devices due to the low Schottky barrier height and the peak mobility was about 1138 cm 2 /V-s and the interface state density (Dit) was about 10 12 cm -2 eV -1 at Et = Ev + 0.6 eV by using full-conductance method.

AB - N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3 as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (Rsd) that is lower than that in P-N junction devices due to the low Schottky barrier height and the peak mobility was about 1138 cm 2 /V-s and the interface state density (Dit) was about 10 12 cm -2 eV -1 at Et = Ev + 0.6 eV by using full-conductance method.

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U2 - 10.1109/IPFA.2015.7224414

DO - 10.1109/IPFA.2015.7224414

M3 - Conference contribution

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T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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BT - Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015

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Wang SY, Chien C-H, Lin JJ, Chang CY. InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 415-418. 7224414. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2015.7224414

InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

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