Influences of silicon nano-crystallized structures on the optical performance of silicon oxynitride rib-type waveguides

Wen Jen Liu; Yin-Chieh Lai; Min Hang Weng

doi:10.1016/j.tsf.2008.06.021

Influences of silicon nano-crystallized structures on the optical performance of silicon oxynitride rib-type waveguides

Wen Jen Liu^*, Yin-Chieh Lai, Min Hang Weng

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Silicon oxynitride (SiON) films were deposited on p-type (100) silicon substrates by plasma enhanced chemical vapor deposition (PECVD), at the temperature of 300 °C, using silane (SiH₄), nitrogen (N₂), ammonia (NH₃) and laughing gas (N₂O) as gas precursors. The effects of the processing gas ratio of N₂O/(N₂ + NH₃) on the optical properties, microstructure and chemical bonding evolutions of SiON material, and the influences of silicon nano-crystallized structures on the optical performance of SiON-based rib-type optical waveguides were studied. Microstructure evolutions analysis and optical measurements indicated that the refractive index and the extinction coefficient could be precisely determined by controlling the N₂O/(N₂ + NH₃) ratio and the thermal annealing process. A greater density and dimension of silicon nano-crystallized structures resulted in more optical scattering effect phenomena occurring between the interface of silicon nano-crystallized structure and SiON matrix and more optical propagation loss.

Original language	English
Pages (from-to)	1086-1090
Number of pages	5
Journal	Thin Solid Films
Volume	517
Issue number	3
DOIs	https://doi.org/10.1016/j.tsf.2008.06.021
State	Published - 1 Dec 2008

Keywords

Optical communication
Optical properties
PECVD
Silicon oxynitride
Waveguide

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@article{edd9042143254d9ca5c1ee7f83b3e756,

title = "Influences of silicon nano-crystallized structures on the optical performance of silicon oxynitride rib-type waveguides",

abstract = "Silicon oxynitride (SiON) films were deposited on p-type (100) silicon substrates by plasma enhanced chemical vapor deposition (PECVD), at the temperature of 300 °C, using silane (SiH4), nitrogen (N2), ammonia (NH3) and laughing gas (N2O) as gas precursors. The effects of the processing gas ratio of N2O/(N2 + NH3) on the optical properties, microstructure and chemical bonding evolutions of SiON material, and the influences of silicon nano-crystallized structures on the optical performance of SiON-based rib-type optical waveguides were studied. Microstructure evolutions analysis and optical measurements indicated that the refractive index and the extinction coefficient could be precisely determined by controlling the N2O/(N2 + NH3) ratio and the thermal annealing process. A greater density and dimension of silicon nano-crystallized structures resulted in more optical scattering effect phenomena occurring between the interface of silicon nano-crystallized structure and SiON matrix and more optical propagation loss.",

keywords = "Optical communication, Optical properties, PECVD, Silicon oxynitride, Waveguide",

author = "Liu, {Wen Jen} and Yin-Chieh Lai and Weng, {Min Hang}",

year = "2008",

month = dec,

day = "1",

doi = "10.1016/j.tsf.2008.06.021",

language = "English",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Influences of silicon nano-crystallized structures on the optical performance of silicon oxynitride rib-type waveguides

AU - Liu, Wen Jen

AU - Lai, Yin-Chieh

AU - Weng, Min Hang

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Silicon oxynitride (SiON) films were deposited on p-type (100) silicon substrates by plasma enhanced chemical vapor deposition (PECVD), at the temperature of 300 °C, using silane (SiH4), nitrogen (N2), ammonia (NH3) and laughing gas (N2O) as gas precursors. The effects of the processing gas ratio of N2O/(N2 + NH3) on the optical properties, microstructure and chemical bonding evolutions of SiON material, and the influences of silicon nano-crystallized structures on the optical performance of SiON-based rib-type optical waveguides were studied. Microstructure evolutions analysis and optical measurements indicated that the refractive index and the extinction coefficient could be precisely determined by controlling the N2O/(N2 + NH3) ratio and the thermal annealing process. A greater density and dimension of silicon nano-crystallized structures resulted in more optical scattering effect phenomena occurring between the interface of silicon nano-crystallized structure and SiON matrix and more optical propagation loss.

AB - Silicon oxynitride (SiON) films were deposited on p-type (100) silicon substrates by plasma enhanced chemical vapor deposition (PECVD), at the temperature of 300 °C, using silane (SiH4), nitrogen (N2), ammonia (NH3) and laughing gas (N2O) as gas precursors. The effects of the processing gas ratio of N2O/(N2 + NH3) on the optical properties, microstructure and chemical bonding evolutions of SiON material, and the influences of silicon nano-crystallized structures on the optical performance of SiON-based rib-type optical waveguides were studied. Microstructure evolutions analysis and optical measurements indicated that the refractive index and the extinction coefficient could be precisely determined by controlling the N2O/(N2 + NH3) ratio and the thermal annealing process. A greater density and dimension of silicon nano-crystallized structures resulted in more optical scattering effect phenomena occurring between the interface of silicon nano-crystallized structure and SiON matrix and more optical propagation loss.

KW - Optical communication

KW - Optical properties

KW - PECVD

KW - Silicon oxynitride

KW - Waveguide

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U2 - 10.1016/j.tsf.2008.06.021

DO - 10.1016/j.tsf.2008.06.021

M3 - Article

AN - SCOPUS:56949107606

SN - 0040-6090

VL - 517

SP - 1086

EP - 1090

JO - Thin Solid Films

JF - Thin Solid Films

IS - 3

ER -

Influences of silicon nano-crystallized structures on the optical performance of silicon oxynitride rib-type waveguides

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