Abstract
Four n-i-n GaAs/AlGaAs diodes have been used to demonstrate that at room temperature the carrier blocking is influenced by the X-valley superlattice in a multiquantum barrier. The diode with a Γ-X crossover multiquantum barrier has a current at least three orders lower than the corresponding diode with only a bulk barrier. However, diodes without Γ-X crossover barriers have resistance as low as 10 Ω in spite of whether a multiquantum barrier exists or not. This indicates that the X-valley superlattice plays an important role in blocking the current flowing across/through a multiquantum barrier.
Original language | English |
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Pages (from-to) | 2720-2722 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 21 |
DOIs | |
State | Published - 1994 |