Influence of X-valley superlattice on electron blocking by multiquantum barriers

Shun-Tung Yen*, C. P. Lee, Chia-Ming Tsai, H. R. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


Four n-i-n GaAs/AlGaAs diodes have been used to demonstrate that at room temperature the carrier blocking is influenced by the X-valley superlattice in a multiquantum barrier. The diode with a Γ-X crossover multiquantum barrier has a current at least three orders lower than the corresponding diode with only a bulk barrier. However, diodes without Γ-X crossover barriers have resistance as low as 10 Ω in spite of whether a multiquantum barrier exists or not. This indicates that the X-valley superlattice plays an important role in blocking the current flowing across/through a multiquantum barrier.

Original languageEnglish
Pages (from-to)2720-2722
Number of pages3
JournalApplied Physics Letters
Issue number21
StatePublished - 1994


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