Influence of structural anisotropy to anisotropic electron mobility in a-plane InN

This study reports on the anisotropic electron transport properties and a correlation between the electron mobility (μ) and the stacking faults (SFs) in the a-plane InN film. Electron mobilities measured by terahertz time-domain spectroscopy and Hall effect measurement along the in-plane [1 ̄ 100] (c ) orientation were much higher than those of the in-plane [0001] (c) orientation. This result shows a sharp contrast to higher defect density for the c orientation as measured by x-ray diffraction. The electrons transporting through the planar SFs aligned along the c direction are expected to experience more scattering by defects, resulting in lower μ for the c orientation.