Influence of rf sputter power on ZnO film characteristics for transparent memristor devices

Firman Mangasa Simanjuntak; Takeo Ohno; Seiji Samukawa

doi:10.1063/1.5125665

Influence of rf sputter power on ZnO film characteristics for transparent memristor devices

Firman Mangasa Simanjuntak^*, Takeo Ohno, Seiji Samukawa

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The impact of the radio-frequency (rf) sputtering power on the switching characteristics of ZnO-based transparent memristor devices has been investigated. Memristor devices made with a high rf power exhibited excellent switching characteristics; meanwhile, decreasing the rf power led to less-apparent switching behavior and increased likelihood of device breakdown. However, high rf power memristors exhibited a reduced switching uniformity as the rf power significantly affected the defect concentration as well as the microstructure of the deposited ZnO films, which determine the switching characteristics and performance of memristor devices.

Original language	English
Article number	105216
Journal	AIP Advances
Volume	9
Issue number	10
DOIs	https://doi.org/10.1063/1.5125665
State	Published - 1 Oct 2019

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abstract = "The impact of the radio-frequency (rf) sputtering power on the switching characteristics of ZnO-based transparent memristor devices has been investigated. Memristor devices made with a high rf power exhibited excellent switching characteristics; meanwhile, decreasing the rf power led to less-apparent switching behavior and increased likelihood of device breakdown. However, high rf power memristors exhibited a reduced switching uniformity as the rf power significantly affected the defect concentration as well as the microstructure of the deposited ZnO films, which determine the switching characteristics and performance of memristor devices.",

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Influence of rf sputter power on ZnO film characteristics for transparent memristor devices

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