Influence of postdeposition annealing on physical and electrical properties of high-k Yb₂TiO₅ gate dielectrics

Keyphrases

• Annealing 33%
• Annealing Temperature 33%
• Atomic Force Microscopy 33%
• Capacitance 33%
• Chemical Features 33%
• Dielectric 33%
• Electrical Properties 100%
• Equivalent Thickness 33%
• Gate Dielectric 100%
• Gate Leakage Current 33%
• Growth Conditions 33%
• Hysteresis Voltage 33%
• Interface State Density 33%
• Low Hysteresis 33%
• Morphological Characteristics 33%
• Physical Properties 100%
• Post-deposition Annealing 100%
• Reactive Co-sputtering 33%
• Si (100) Substrate 33%
• Small Densities 33%
• Structure-property Relationships 33%
• X Ray Diffraction 33%
• X-ray Photoelectron Spectroscopy 33%
• Y2SiO5 100%

Material Science

• Atomic Force Microscopy 33%
• Capacitance 33%
• Density 33%
• Dielectric Material 100%
• Film 33%
• Morphology 33%
• Phase Composition 33%
• Physical Property 100%
• X-Ray Diffraction 33%
• X-Ray Photoelectron Spectroscopy 33%